Showing posts with label Samsung. Show all posts
Showing posts with label Samsung. Show all posts

Monday, January 17, 2022

Samsung debuts flagship Exynos 2200 mobile processor

Samsung Electronics Co. announced mass production of its flagship Exynos 2200 premium mobile processor produced using 4-nanometer (nm) EUV (extreme ultraviolet lithography) technology. 

The Exynos 2200 mobile processor leverages AMD RDNA 2 architecture based Samsung Xclipse graphics processing unit (GPU) with hardware-accelerated Ray Tracing on Mobile for gaming. 

“Built on the most advanced 4-nanometer (nm) EUV (extreme ultraviolet lithography) process, and combined with cutting-edge mobile, GPU, and NPU technology, Samsung has crafted the Exynos 2200 to provide the finest experience for smartphone users. With the Xclipse, our new mobile GPU built with RDNA 2 graphics technology from the industry leader AMD, the Exynos 2200 will redefine mobile gaming experience, aided by enhanced graphics and AI performance,” said Yongin Park, President of System LSI Business at Samsung Electronics. “As well as bringing the best mobile experience to the users, Samsung will continue its efforts to lead the journey in logic chip innovation.”

“AMD RDNA 2 graphics architecture extends power-efficient, advanced graphics solutions to PCs, laptops, consoles, automobiles and now to mobile phones. Samsung’s Xclipse GPU is the first result of multiple planned generations of AMD RDNA graphics in Exynos SoCs,” said David Wang, Senior Vice President of Radeon Technologies Group at AMD. 

The Exynos 2200 is one of the first in the market to integrate Arm’s latest Armv9 CPU cores which offer a substantial improvement over Armv8 in terms of security and performance. The octa-core CPU of Exynos 2200 is designed in a tri-cluster structure made up of a single powerful Arm Cortex®-X2 flagship-core, three performance and efficiency balanced Cortex-A710 big-cores and four power-efficient Cortex-A510 little-cores.

The Exynos 2200 NPU’s performance has doubled compared to its predecessor, allowing more calculations in parallel and enhancing the AI performance. The NPU now offers much higher precision with FP16 (16bit floating point) support in addition to power efficient INT8 (8bit integer) and INT16.

Also, the Exynos 2200 integrates a fast 3GPP Release 16 5G modem supporting both sub-6GHz and mmWave (millimeter Wave) spectrum bands. With E-UTRAN New Radio – Dual Connectivity (EN-DC), which utilizes both 4G LTE and 5G NR signals, the modem can boost the speed up to 10Gbps.

The Exynos 2200’s image signal processor (ISP) architecture has been redesigned to support the latest image sensors for ultra-high resolution of up to 200 megapixel (MP). At 30 frames-per- second (fps), the ISP supports up to 108 MP in single camera mode, and 64+36Mp in dual camera mode. It can also connect up to seven individual image sensors and drive four concurrently for advanced multi-camera setups. For video recording, the ISP supports up to 4K HDR (or 8K) resolution.

The Exynos 2200 can decode videos up to 4K at 240fps or 8K at 60fps and encodes up to 4K at 120fps or 8K at 30fps. In addition, the MFC integrates power efficient AV1 decoder enabling longer playback time. 

http://www.samsung.com/exynos

Thursday, January 13, 2022

Samsung demos first MRAM based in-memory computing

Samsung Electronics Co. announced the first demonstration of in-memory computing based on MRAM (Magnetoresistive Random Access Memory). 

In memory computing differs from standard computer architecture in that both data storage and data computing is performed in a memory network. Since this scheme can process a large amount of data stored within the memory network itself without having to move the data, and also because the data processing in the memory network is executed in a highly parallel manner, power consumption is substantially reduced. In-memory computing has thus emerged as one of the promising technologies to realize next-generation low-power AI semiconductor chips.

The research was led by Samsung Advanced Institute of Technology (SAIT) in close collaboration with Samsung Electronics Foundry Business and Semiconductor R&D Center. The first author of the paper, Dr. Seungchul Jung, Staff Researcher at SAIT, and the co-corresponding authors Dr. Donhee Ham, Fellow of SAIT and Professor of Harvard University, and Dr. Sang Joon Kim, Vice President of Technology at SAIT, spearheaded the research.

The Samsung Electronics researchers have provided a solution to this issue by an architectural innovation. Concretely, they succeeded in developing an MRAM array chip that demonstrates in-memory computing, by replacing the standard, ‘current-sum’ in-memory computing architecture with a new, ‘resistance sum’ in-memory computing architecture, which addresses the problem of small resistances of individual MRAM devices.

Samsung’s research team subsequently tested the performance of this MRAM in-memory computing chip by running it to perform AI computing. The chip achieved an accuracy of 98% in classification of hand-written digits and a 93% accuracy in detecting faces from scenes.

"In-memory computing draws similarity to the brain in the sense that in the brain, computing also occurs within the network of biological memories, or synapses, the points where neurons touch one another,” said Dr. Seungchul Jung, the first author of the paper. “In fact, while the computing performed by our MRAM network for now has a different purpose from the computing performed by the brain, such solid-state memory network may in the future be used as a platform to mimic the brain by modelling the brain’s synapse connectivity."

https://research.samsung.com/news


Thursday, December 23, 2021

Samsung's new enterprise PCIe 5.0 SSD reads at up to 13,000 MB/sec

Samsung Electronics introduced its next-gen, enterprise SSDs integrating the PCIe 5.0 interface with its own sixth-generation V-NAND.

Samsung said its new PM1743 will feature a sequential read speed of up to 13,000 megabytes per second (MB/s) and a random read speed of 2,500K input/output operations per second (IOPS), offering 1.9x and 1.7x faster speeds over the previous PCIe 4.0-based products. Moreover, write speeds have been elevated significantly, with a sequential write speed of 6,600 MB/s and a random write speed of 250K IOPS, also delivering 1.7x and 1.9x faster speeds, respectively.  In addition, the new SSD can provide improved power efficiency of up to 608 MB/s per watt, which represents about a 30% boost over the previous generation. 

Samsung will offer a variety of capacities from 1.92 terabytes (TB) to 15.36TB in the conventional 2.5-inch form factor, as well as in a 3-inch EDSFF (E3.S) — an increasingly popular SSD form factor designed specifically for next-generation enterprise servers and data centers. 

Samsung also projects that customers deploying 7.5mm EDSFF SSDs will be able to double the storage density in their systems, compared to when the 15mm 2.5-inch form factor is used.

The new SSDs are also expected to be the industry's first PCIe 5.0 SSD with dual-port support.

"For over a decade, Samsung has been delivering SATA, SAS and PCIe-based SSDs that have been recognized for outstanding performance and reliability by leading enterprise server customers including corporations, governments and financial institutions," said Yong Ho Song, Executive Vice President and Head of the Memory Controller Development Team at Samsung Electronics. "The introduction of our PCIe 5.0 SSD, along with PCIe 6.0-based product developments that are underway, will further solidify our technological leadership in the enterprise server market."

"Intel has been working with Samsung to test Samsung's newest PCIe NVMe SSD, the PM1743. Together, we have jointly resolved complicated technical issues encountered with PCIe 5.0 during this initial evaluation period. The performance potential of Gen5 is truly impressive. In the near future, we strongly believe that PCIe Gen5 systems with high-speed NVMe SSDs will have the ability to transform applications such as AI/ML and high-performance databases," said Jim Pappas, Director, Technology Initiatives, Intel Corporation. "Looking ahead, we are confident that Intel and Samsung's continued commitment in industry leadership will provide these and other benefits to our mutual customers."

Mass production is expected in Q1 2022.

https://news.samsung.com/us/samsung-develops-high-performance-pcie-5-ssd-enterprise-servers/

Thursday, December 16, 2021

IBM and Samsung unveil Vertical Transport Field Effect Transistors

IBM and Samsung Electronics unveiled a new class of Vertical Transport Field Effect Transistors (VTFET) - a breakthrough the companies say that could reduce energy usage by 85 percent compared to a scaled fin field-effect transistor (finFET). The design positions the transistors perpendicular to the surface of the chip with a vertical, or up-and-down, current flow. IBM says the vertical positioning allows for greater current flow with less wasted energy. 

The partners have demonstrated a path to scaling beyond nanosheet, implying a path toward manufacturability and further innovation.

Research was carried out at IBM's Albany Nanotech Complex facility.

The companies also announced that Samsung will manufacture IBM's chips at the 5 nm node. These chips are anticipated to be used in IBM's own server platforms. This follows the announcement in 2018 that Samsung would manufacture IBM's 7 nm chips, which became available in the IBM Power10 family of servers earlier this year. The IBM Telum processor, also revealed earlier this year, is similarly manufactured by Samsung using IBM's designs.

https://newsroom.ibm.com/2021-12-14-IBM-and-Samsung-Unveil-Semiconductor-Breakthrough-That-Defies-Conventional-Design

Samsung Foundry targets 3nm in 2022, 2nm in 2025

Samsung Foundry is scheduled to start producing its customers' first 3nm-based chip designs in the first half of 2022, while its second generation of 3nm is expected in 2023.During its 5th annual Samsung Foundry Forum (SFF) 2021 underway this week, Samsung Electronics unveiled plans for continuous process technology migration to 3- and 2-nm based on the company’s Gate-All-Around (GAA) transistor structure.Samsung said its first 3nm GAA process node...


IBM announces 2nm chip breakthrough

IBM unveiled a 2 nanometer semiconductor design and process breakthrough based on a new Gate-All-Around (GAA) nanosheet device architecture. The technology is implemented on a 300 millimeter (mm) wafer built at IBM Research’s semiconductor research facility in Albany, New York.

IBM said it is able to fit 50 billion transistors in a space roughly the size of a fingernail. A 2 nm chip node transistor equates to an approximate 45 percent performance improvement over  7 nm chips. This results in an approximate 75 percent power savings, at the same performance level. 

IBM Research’s Albany lab features one of the most advanced EUV lithography tools in the industry. 

"The IBM innovation reflected in this new 2 nm chip is essential to the entire semiconductor and IT industry," said Darío Gil, SVP and Director of IBM Research. "It is the product of IBM's approach of taking on hard tech challenges and a demonstration of how breakthroughs can result from sustained investments and a collaborative R&D ecosystem approach."


Wednesday, December 15, 2021

Samsung ramps up automotive memory chips for EVs

Samsung Electronics unveiled a portfolio of automotive memory solutions designed for next-generation autonomous electric vehicles. The new lineup includes a 256-gigabyte (GB) PCIe Gen3 NVMe ball grid array (BGA) SSD, 2GB GDDR6 DRAM and 2GB DDR4 DRAM for high-performance infotainment systems, as well as 2GB GDDR6 DRAM and 128GB Universal Flash Storage (UFS) for autonomous driving systems.

The need for high-capacity, high-performance SSDs and graphics DRAM is driven by advanced features in infotainment systems such as high-definition maps, video streaming and 3D gaming, together with the growing use of autonomous driving systems.

Samsung's 256GB BGA SSD controller and firmware are developed in-house for optimized performance, offering a sequential read speed of 2,100 megabytes per second (MB/s) and a sequential write speed of 300MB/s, which are seven and two times faster than today's eMMC, respectively. Furthermore, the 2GB GDDR6 DRAM features up to a 14 gigabit-per-second (Gbps) data rate per pin. Such exceptional speeds and bandwidth will support complex processing of various multimedia applications as well as large amounts of autonomous driving data, contributing to a safer, more dynamic and more convenient driving experience.

"With the recent proliferation of electric vehicles and the rapid advancement of infotainment and autonomous driving systems, the semiconductor automotive platform is facing a paradigm shift. What used to be a seven to eight-year replacement cycle is now being compressed into a three to four-year cycle, and at the same time, performance and capacity requirements are advancing to levels commonly found in servers," said Jinman Han, executive vice president and head of Memory Global Sales & Marketing at Samsung Electronics. "Samsung's reinforced lineup of memory solutions will act as a major catalyst in further accelerating the shift toward the ‘Server on Wheels’ era."


Monday, November 29, 2021

Samsung intros three automotive chips

 Samsung Electronics Co. introduced three of its latest automotive chip solutions: the Exynos Auto T5123 for 5G connectivity, the Exynos Auto V7 for in-vehicle infotainment systems, and the ASIL-B certified S2VPS01 power management IC (PMIC) for the Auto V series.

  • Exynos Auto T5123: a 3GPP Release 15 telematics control unit specifically designed to bring 5G in both standalone (SA) and non-standalone (NSA) mode to the next generation of connected cars. It supports downloads of up to 5.1 Gbps, and supports a high speed PCIe (PCI Express) interface and a low-power high-performance LPDDR4x mobile DRAM. In addition, the unit comes with two Cortex-A55 CPU cores and a built-in Global Navigation Satellite System (GNSS) to minimize the use of external ICs and help reduce product development time. 
  • Exynos Auto V7: an automotive-brand processor for in-vehicle infotainment systems. The V7 integrates eight 1.5-gigahertz (GHz) Arm Cortex-A76 CPU cores and 11 Arm Mali G76 GPU cores. The GPU comes in two separate groups, with three cores in the ‘small’ domain for cluster display and AR-HUD, and eight in the ‘big’ domain for central information display (CID) and others. Such physical separation allows the GPU to support multiple systems simultaneously and brings safer operation as it keeps one domain from interfering with another. In addition to its powerful CPU and GPU, the V7 is equipped with an NPU for convenient services such as virtual assistance that can process visual and audio data for face, speech or gesture recognition features. It also offers strong data protection through an isolated security processor for crypto operation and provides a hardware key using a one-time programmable (OTP) or physical unclonable function (PUF). Furthermore, for critical functional safety, the Exynos Auto V7 complies with ASIL-B requirements of safety support for a digital cluster and an embedded safety island that detects and manages faults to maintain a safe state with a fault management unit (FMU). The Exynos Auto V7 is currently in mass production and is being used in Volkswagen’s latest In-Car Application-Server (ICAS) 3.1, developed by LG Electronics’ VS (Vehicle component Solutions) division.
  • S2VPS01 – An ASIL-B Certified Power Management IC for the Exynos Auto V Series

“Smarter and more connected automotive technologies for enriched in-vehicle experiences including entertainment, safety and comfort are becoming critical features on the road,” said Jaehong Park, Executive Vice President of System LSI Custom SOC Business at Samsung Electronics. “With an advanced 5G modem, an AI-enhanced multi-core processor, and a market-proven PMIC solution, Samsung is transfusing its expertise in mobile solutions into its automotive lineup and is positioned to expand its presence within the field.”

http://www.samsung.com/exynos


Wednesday, November 10, 2021

Inspur and Samsung build open storage solution for OCP

Inspur Information, which ranks among the world’s top 3 server manufacturers, and Samsung announced a Poseidon V2 E3.x reference system for the Open Compute Project community.

This product adopted composable architecture to maximize the benefits of EDSFF E3.x form factor.  Poseidon V2 system can accommodate not only the PCIe Gen5 SSDs but also various devices like AI/ML accelerators or CXL Memory Expanders.  Data center users can configure the system according to application's needs.


 

“Following the development of the E1.S reference system, we expect that this type of storage solution will become one of the most sought-after and cost-effective storage solutions on the market for leading cloud data center servers and hyperscale companies that operate large data centers,” according to Jongyoul Lee, Executive Vice President of Samsung’s Memory Software Development Team. “We are eager to continue our collaborative work on the E3.S reference system with Inspur to drive further advancements in future server and storage systems.”

“Through our combined vision with Inspur's general purpose server design and Samsung's Poseidon, we believe E1.S and E3.x will bring a revolutionary use case that fulfills the need for an efficient high-performance and high-density storage system,” stated Alan Chang, VP of Technical Operation at Inspur Information. “Customers who use general purpose severs as their compute can smoothly transition to Poseidon whose modularized design will reduce redundant engineering and validation across the board. We anticipate even broader usage models and applications with the new Poseidon v2 specification.”

https://www.inspursystems.com

Samsung announces 2.5F Hybrid-Substrate Cube packaging

Samsung Electronics introduced Hybrid-Substrate Cube (H-Cube) technology, its latest 2.5D packaging solution specialized for semiconductors for HPC, AI, data center, and networking chips that require high-performance and large-area packaging technology.

2.5D packaging enables logic chips or high-bandwidth memory (HBM) to be placed on top of a silicon interposer in a small form factor. 

Samsung said its H-Cube technology features a hybrid substrate combined with a fine-pitch substrate which is capable of fine bump connection, and a High-Density Interconnection (HDI) substrate, to implement large sizes into 2.5D packaging.

“H-Cube solution, which is jointly developed with Samsung Electro-mechanics (SEMCO) and Amkor Technology, is suited to high-performance semiconductors that need to integrate a large number of silicon dies,” said Moonsoo Kang, senior vice president and Head of Foundry Market Strategy Team at Samsung Electronics. “By expanding and enriching the foundry ecosystem, we will provide various package solutions to find a breakthrough in the challenges our customers are facing.”

“In today’s environment where system integration is increasingly required and substrate supplies are constrained, Samsung Foundry and Amkor Technology have successfully co-developed H-Cube to overcome these challenges,” said JinYoung Kim, senior vice president of Global R&D Center at Amkor Technology. “This development lowers barriers to entry in the HPC/AI market and demonstrates successful collaboration and partnership between the foundry and outsourced semiconductor assembly and test (OSAT) company.”


https://www.samsungfoundry.com





Wednesday, October 27, 2021

Ciena and Samsung partner on mobile solutions

Samsung Electronics will offer Ciena’s xHaul solutions with its own 5G solutions to support 5G networks.

The companies agreed to collaborate on hardware and software solutions to telecom operators.  The arrangement combines Samsung’s 5G RAN and Core, including vRAN solutions, baseband units and radios, with Ciena’s xHaul Routing and Switching portfolio and next-generation Manage, Control and Plan (MCP) domain controller.


“As 5G proliferates, immersive services like AR/VR and HD video streaming are becoming the center of our daily mobile lives. In order to deliver more powerful 5G services, the current network architecture needs to evolve,” said Wonil Roh, Senior Vice President and Head of Product Strategy, Networks Business at Samsung Electronics. “Samsung’s ability to couple our best-in-class 5G solutions with a leader in transport technologies like Ciena will give customers a solution to address this need, and do so with the confidence to scale and evolve their networks to support the future of 5G.”

“Together with Samsung, we’re fueling the next generation of mobile connectivity to unleash the full potential of 5G,” said Matt Cook, Vice President, Global Partner Organization, Ciena. “As both companies are leading innovators in our respective spaces with strong customer bases for these portfolios, this powerful collaboration leverages our collective leadership to create best-in-breed 5G networks that are open, scalable and adaptive.”


Thursday, October 14, 2021

Verizon's mmWave 5G hits 711 Mbps up with Qualcomm, Samsung

Verizon, Samsung Electronics, and Qualcomm Technologie reached upload speeds of 711 Mbps in a lab trial using aggregated bands of mmWave spectrum.

The demonstration combined 400 MHz of Verizon’s 5G mmWave frequency and 20 MHz of 4G frequency using the latest 5G technologies, including mmWave carrier aggregation and Single-User MIMO (SU-MIMO). Network technology used in the demo included Samsung’s 28 GHz 5G Compact Macro and virtualized RAN (vRAN) and Core (vCore) along with a smartphone form-factor test device powered by the flagship Snapdragon X65 5G Modem-RF System.


“Our mmWave build is a critical differentiator, even as we drive towards massive and rapid expansion of our 5G service using our newly acquired mid-band spectrum, we are doubling down on our commitment to mmWave spectrum usage,” said Adam Koeppe, senior vice president, technology planning, Verizon. “You will see us continue to expand our mmWave footprint to deliver game changing experiences for the densest parts of our network and for unique enterprise solutions. We had over 17k mmWave cell sites at the end of last year and are on track to add 14k more in 2021, with over 30k sites on air by the end of this year, and we’ll keep building after that,” said Koeppe.


Wednesday, October 6, 2021

Samsung Foundry targets 3nm in 2022, 2nm in 2025

Samsung Foundry is scheduled to start producing its customers' first 3nm-based chip designs in the first half of 2022, while its second generation of 3nm is expected in 2023.

During its 5th annual Samsung Foundry Forum (SFF) 2021 underway this week, Samsung Electronics unveiled plans for continuous process technology migration to 3- and 2-nm based on the company’s Gate-All-Around (GAA) transistor structure.

Samsung said its first 3nm GAA process node utilizing Multi-Bridge-Channel FET (MBCFETTM) will allow up to 35 percent decrease in area, 30 percent higher performance or 50 percent lower power consumption compared to the 5nm process. In addition to power, performance, and area (PPA) improvements, as its process maturity has increased, 3nm’s logic yield is approaching a similar level to the 4nm process, which is currently in mass production.

The 2nm process node with MBCFET is in the early stages of development with mass production in 2025.

“We will increase our overall production capacity and lead the most advanced technologies while taking silicon scaling a step further and continuing technological innovation by application,” said Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics. "Amid further digitalization prompted by the COVID-19 pandemic, our customers and partners will discover the limitless potential of silicon implementation for delivering the right technology at the right time."

Additionally, Samsung is advancing its 14nm process in order to support 3.3V high voltage or flash-type embedded MRAM (eMRAM) which enables increased write speed and density. It will be a great option for applications such as micro controller unit (MCU), IoT and wearables. Samsung’s 8nm radio frequency (RF) platform is expected to expand the company’s leadership in the 5G semiconductor market from sub-6GHz to mmWave applications.

http://news.samsung.com

Thursday, July 22, 2021

Samsung expands its SDN ambitions from data center to transport and enterprise

Samsung Electronics is expanding its SDN portfolio, which includes controllers, orchestrators, switches and routers, with the goal of extending its presence from data centers to enterprises in various sectors, including education, retail and energy. This full lineup of SDN will also support mobile access (xHaul), which refers to fronthaul, midhaul and backhaul transport networks.

Samsung highlights its following advantages:

  • “SDN In-a-Box”: Samsung’s SDN solution can serve multiple purposes in a single box, including data center SDN, enterprise SDN and mobile access (xHaul) SDN.
  • User-Friendly: This SDN delivers a user-friendly, award-winning 3D-based UX design.1 With high accessibility and usability, this solution provides a simplified view of an end-to-end network, enabling more unified and consistent management.
  • Openness: The company’s cloud-native, open source-based SDN solutions can integrate seamlessly with third-party switches and routers. Samsung’s SDN is based on the Open Network Operating System (ONOS), supporting various types of open interfaces to enable multi-vendor interoperability.
  • End-to-End Network Slicing: SDN technology can automate network slicing end-to-end, which will help fulfill service-level agreement (SLA) requirements, even at the transport level. Combined with its RAN and Core, Samsung’s SDN solution will enable mobile operators to offer optimal networks for various business models through company’s end-to-end network slicing capability.

“Networks are becoming more agile with SDN technology in the 5G era. Samsung is proud to take part in this network evolution by offering a full lineup of SDN solutions and bringing more operational flexibility to 5G network management,” said Sohyong Chong, Senior Vice President and Head of Software R&D, Networks Business at Samsung Electronics. “Samsung’s SDN will help operators and enterprises rapidly introduce new 5G applications, services and infrastructures, driving faster time to market.”

https://news.samsung.com/global/samsung-expands-its-lineup-of-sdn-solutions 

Thursday, July 15, 2021

KT activates 5G Standalone (SA) service with Samsung

KT activated Korea’s first commercial 5G SA network in collaboration with Samsung.

For this commercial launch, Samsung provided KT its end-to-end 5G network solutions from Radio Access Network (RAN) to Core. KT facilitated a smooth transition to 5G SA by using Samsung’s 5G RAN and Core, which can support 5G SA and NSA simultaneously. 

“Samsung is proud to play a leading role in placing Korea at the forefront of network technology innovation,” said Seungil Kim, Vice President and Head of Korea Business, Networks Business at Samsung Electronics. “Our reliable and flexible 5G SA architecture, powered by our 5G RAN and Core, will enable KT to offer its users the next generation of enhanced use cases and mobile experiences. By introducing 5G SA services in Korea, we are taking a meaningful step in 5G journey, and look forward to delivering more transformative experiences to customers and businesses with KT.”


“Our 5G SA service will be an important step in unlocking the full potential of 5G and it will bring new value to our customers,” said Youngsoo Seo, Senior Vice President and Director of Network Research Technology Unit, Network Group at KT. “As a digital platform company, KT will continue to make efforts to help drive Korea’s Digital New Deal and ensure our customers enjoy the best experiences and opportunities that 5G has to offer.”


Wednesday, July 14, 2021

Australia's TPG Telecom conducts vRAN trial with Samsung

TPG Telecom in Australia is working with Samsung to conduct a 5G virtualized RAN (vRAN) trial on 26GHz.

For the trial, Samsung will provide its Compact Macro and vRAN solution. Samsung’s latest 5G Compact Macro brings together a baseband, radio and antenna in a single form-factor. This compact and lightweight solution can be installed on the sides of buildings, as well as on utility poles, for the swift build-out of 5G networks. Samsung’s industry-leading commercial vRAN solution is built on the company’s independently developed stack, and runs on commercial-off-the-shelf (COTS) servers. 


In the trial, which is the first of its kind in the nation, Samsung will place its vRAN solution in TPG Telecom’s brand new Innovation Lab in Glebe, NSW. Additionally, Samsung’s latest 5G mmWave product—Compact Macro—will be deployed in the wider Glebe area.

“We are very pleased to partner with Samsung as part of our new Innovation Lab to drive product and technology innovation by trialing virtualization,” said Iñaki Berroeta, CEO at TPG Telecom. 


Wednesday, June 16, 2021

Samsung and UC Santa Barbara demo 6G Terahertz prototype

Samsung Electronics, in collaboration with the University of California, Santa Barbara (UCSB), demonstrated a 6G Terahertz (THz) wireless communication prototype which consists of a 16-channel phased-array transmitter and receiver modules. These were driven by CMOS RFICs (Radio Frequency Integrated Circuits), and a baseband unit to process signals with 2GHz bandwidth and fast adaptive beamforming. In the over-the-air test, the prototype system achieved real-time throughput of 6.2 Gbps over a 15-meter distance with adaptive beam steering capability at the Terahertz frequency.

Samsung says the THz band includes an enormous amount of available spectrum, which will enable wideband channels with tens of GHz-wide bandwidth. This could potentially provide a means to meet the 6G requirement of terabits per second data rate. 

Samsung and UCSB researchers have been working closely on the development of a THz phased array. The precise digital beamforming calibration algorithm, developed by Samsung, enables these modules to achieve high beamforming gain.


Wednesday, June 9, 2021

Samsung announces 8nm RF chip architecture for 5G

Samsung Electronics introduced its newest radio frequency (RF) technology based on 8-nanometer (nm) process.

Samsung’s 8nm RF process technology is the latest addition to an already broad portfolio of RF-related solutions, including 28nm- and 14nm-based RF. The company notes shiptment of more than 500 million mobile RF chips for premium smartphones since 2017.

Samsung has developed a unique architecture exclusive to 8nm RF named RFextremeFET (RFeFET) that can significantly improve RF characteristics while using less power. In comparison to 14nm RF, Samsung’s RFeFET supplements the digital PPA scaling and restores the analog/RF scaling at the same time, thereby enabling high-performance 5G platforms. Compared to 14nm RF, Samsung’s 8nm RF process technology provides up to a 35-percent increase in power efficiency with a 35-percent decrease in the RF chip area as a result of the RFeFET architectural innovation.

“Through excellence in innovation and process manufacturing, we’ve reinforced our next-generation wireless communication offerings,” said Hyung Jin Lee, Master of Foundry Technology Development Team at Samsung Electronics. “As 5G mmWave expands, Samsung’s 8nm RF will be a great solution for customers looking for long battery life and excellent signal quality on compact mobile devices.”

Tuesday, June 1, 2021

Samsung unveils SSD with Zoned Namespace (ZNS) technology

Samsung Electronics unveiled its new enterprise solid-state drive (SSD) featuring Zoned Namespace (ZNS) technology for maximizing available user capacity and extending the drive's lifespan.

ZNS allows data to be grouped based on their usage and access frequency, and stored sequentially in independent zones within an SSD. Without the need to move and rearrange data, ZNS SSDs can significantly reduce the number of write operations, lowering the drive’s write amplification factor (WAF) — the amount of actual writes performed by the drive compared to writes initially instructed by the host system. The closer the WAF is to one, the more efficient the SSD and the longer it will last.

Samsung said its new ZNS SSD can achieve a WAF close to one, a major improvement over typical server SSD values between three and four. This will make the drive last up to four times longer than conventional NVMe SSDs. 

“Samsung’s ZNS SSD reflects our commitment to introducing differentiated storage solutions that can substantially enhance the reliability and lifetime of server SSDs,” said Sangyeun Cho, senior vice president of the Memory Software Development Team at Samsung Electronics. “We plan to leverage quad-level cell (QLC) NAND technology in our next-generation ZNS drives to enable higher thresholds for storage performance and capacity in the enterprise systems of tomorrow.”

Built upon Samsung’s sixth-generation V-NAND, the 2.5-inch PM1731a will come in two terabyte (TB) and four TB models. 

https://news.samsung.com/us/samsung-introduces-first-zns-ssd-maximized-user-capacity-and-enhanced-lifespan/

Sunday, May 9, 2021

Ericsson and Samsung reach global patent agreement


Ericsson and Samsung reached a multi-year agreement on global patent licenses, including patents relating to all cellular technologies. The cross-license agreement covers sales of network infrastructure and handsets from January 1, 2021. 

This settlement ends complaints filed by both companies before the United States International Trade Commission (USITC) as well as the ongoing lawsuits in several countries and confirms the value of the strong patent portfolios of both companies.

Financial terms were not disclosed.

Ericsson and Samsung also agreed on technology cooperation projects to advance the mobile industry in open standardization and create valuable solutions for consumers and enterprises.

Christina Petersson, Chief Intellectual Property Officer at Ericsson says: “We are delighted to sign a mutually beneficial agreement with Samsung. This important deal confirms the value of our patent portfolio and further illustrates Ericsson’s commitment to FRAND principles.”




Wednesday, May 5, 2021

Samsung adopts 2.5D packaging technology

Samsung Electronics Co. has begun implementing its next-generation 2.5D chip packaging technology Interposer-Cube4 (I-Cube4).

Samsung’s I-Cube is a heterogeneous integration technology that horizontally places one or more logic dies (CPU, GPU, etc.) and several High Bandwidth Memory (HBM) dies on top of a silicon interposer, making multiple dies operate as a single chip in one package.

Samsung’s new I-Cube4, which incorporates four HBMs and one logic die, was developed in March as the successor of I-Cube2. From high-performance computing (HPC) to AI, 5G, cloud and large data center applications, I-Cube4 is expected to bring another level of fast communication and power efficiency between logic and memory through heterogeneous integration.

“With the explosion of high-performance applications, it is essential to provide a total foundry solution with heterogeneous integration technology to improve the overall performance and power efficiency of chips,” said Moonsoo Kang, senior vice president of Foundry Market Strategy at Samsung Electronics. “With the mass-production experience amassed through I-Cube2 and the commercial breakthroughs of I-Cube4, Samsung will wholly support customers’ product implementations.”


Monday, April 19, 2021

Verizon begins C-band rollout with Ericsson and Samsung

Verizon confirmed that the installation of C-band equipment from Ericsson and Samsung Electronics Co. is now underway. 

Ericsson is providing its Antenna-Integrated Radio (AIR) product, which features a massive Multiple Input Multiple Output (MIMO) architecture with Ericsson Uplink Booster and advanced beamforming technology.  Samsung is also supplying Massive MIMO radios and fully virtualized RAN (vRAN) solutions.

Verizon secured an average of 161 MHz of C-band spectrum nationwide in the recent FCC auction,  Verizon's rollout requires new network equipment including basebands, radios and antennas to be placed on existing towers.

“We’re moving fast, with cooperation from our equipment partners, to have everything in place as soon as this C-band spectrum is cleared for use,” said Kyle Malady, Chief Technology Officer at Verizon. “This is a massive undertaking designed to add this game-changing capability as quickly as possible to the network our customers already rely on for consistent, superior performance when they need it most.”

In the first quarter of 2022, Verizon expects to put into service the new 5G C-band spectrum in the initial 46 markets and to provide 5G Ultra Wideband service to 100 million people. Over 2022 and 2023, coverage is expected to increase to more than 175 million people and by 2024 and beyond, when the remaining C-band spectrum is cleared, more than 250 million people are expected to have access to Verizon’s 5G Ultra Wideband service on C-band spectrum.

Verizon’s spectrum bands are contiguous, which will streamline deployment across the mainland United States. Also helping to speed deployment are the recently signed and announced agreements with Verizon’s tower partners, Crown and SBA Communications, which provide for process improvements including standardizing and reducing forms and minimizing legal reviews, allowing Verizon engineering teams to expedite deployment of C-band equipment. Both agreements establish terms for leasing space on existing towers for C-band equipment.

https://www.verizon.com/about/news/verizon-starts-c-band-equipment-deployment