Showing posts with label Samsung. Show all posts
Showing posts with label Samsung. Show all posts

Monday, September 9, 2019

Samsung and Amdocs partner on 5G Open Cloud networking

Samsung Electronics  and Amdocs are collaborating on multiple joint initiatives around open cloud 5G networks.

Specifically, Amdocs and Samsung Networks will collaborate to onboard and integrate Virtual Network Functions (VNFs) so that service provider can better take advantage of Samsung’s 5G network solutions with Open Network Automation Platform (ONAP). The collaboration will start with Samsung’s Virtualized Central Unit (vCU) function and will expand to cover additional areas through execution of a comprehensive program, including components of the 5G core, to help CSPs realize a full end-to-end 5G cloud network.

The two companies will also explore the possibility of delivering relevant network services, such as vRAN rollout and integration, and related Network Function Virtualization (NFV) enablement solutions. Virtualized network functions that are managed by a comprehensive automation and orchestration platform will provide CSPs with a rich set of innovative new services that can be deployed, discovered and scaled on demand, providing new ways to monetize the network.

“This partnership with Amdocs on ONAP enablement helps us accelerate an important shift towards a dynamic software-driven architecture that will empower networks to adjust themselves to meet ever-changing user demands and network conditions,” said Jaeho Jeon, Executive Vice President and Head of R&D, Networks Business at Samsung Electronics. “As we move 5G business forward, we continue to drive the adoption of ONAP and 5G network deployment to enrich the 5G ecosystem.”

“As the deployment of 5G networks accelerates, CSPs are taking the opportunity to rearchitect their network to be open, virtualized, cloud-based and AI-infused,” said Anthony Goonetilleke, group president of Media, Network and Technology, Amdocs. “By teaming with Samsung, Amdocs combines its expertise in enterprise-grade ONAP and software-defined systems with Samsung’s advanced 5G network solutions portfolio to better enable CSPs to launch innovative new services at speed.”

Wednesday, September 4, 2019

Samsung's prototype Key Value SSD offloads processing from server

Samsung Electronics announced the first standards-based prototype of a new type of SSD that moves the storage workload from the server CPUs into the SSD.

Samsung’s KV SSD prototype is based on a new open standard for a Key Value Application Programming Interface (KV API) that was recently approved by SNIA.

Samsung says there are numerous benefits of KV storage technology. Rather than operating as a block device, the KV SSD moves resource-draining storage operations from the host CPU to the SSD itself. This results in:

  • Much-improved system-level performance
  • Freeing the CPU from computational work, such as block operations and storage-level garbage collection
  • Substantially greater scalability in the number of linked SSDs by reducing CPU overload
  • Greatly reduced write amplification (WAF)
  • Much less wear on each SSD
  • Greater software efficiency

SNIA’s KV API standard was developed in response to growing concern that as the speed of SSDs further increases, system-level performance was reaching the point of saturation, allowing relatively few SSDs to be optimally interlinked. As the performance of SSDs continues to improve, the situation is expected to worsen when ever-increasing loads are placed on the CPU to manage block operations.

While there are other approaches to this now under development, KV SSD technology is likely to be the most cost-efficient for use with many storage appliances and IT systems.

“The SNIA KV API specification, which provides an industry-wide interface between an application and a Key Value SSD, paves the way for widespread industry adoption of a standardized KV API protocol,” said Michael Oros, SNIA Executive Director.

Tuesday, September 3, 2019

Samsung intros 5G-integrated processor in 8nm

Samsung Electronics introduced its latest mobile processor, the Exynos 980, combining an integrated 5G modem and intelligent processing performance in a single chip. Mass production is expected by the end of this year.

Samsung describes its Exynos 980, which is based on 8-nanometer (nm) FinFET process technology, as artificial intelligence (AI) mobile processor with an integrated 5G modem.

The modem supports 5G to 2G networks, providing a fast gigabit downlink speed in 4G LTE and up to 2.55 Gbps in sub-6-gigahertz (GHz) 5G.  It also supports E-UTRA-NR Dual Connectivity (EN-DC), which combines 2CC LTE and 5G connectivity to maximize mobile downlink speed of up to 3.55Gbps. In addition, the processor supports Wi-Fi 6.

The chip packs two of the latest high-performance Cortex-A77 CPU cores and four efficient Cortex-A55 cores, enabling it to run multiple apps, intricate UX designs, and high-resolution graphic games.

The neural processing unit (NPU) features elevated performances of up to 2.7 times compared to its predecessor and is built into the Exynos 980 to provide new levels of on-device intelligence. With the NPU readily available on-chip, AI tasks are processed right from the device rather than off-loaded to a server, thereby providing better data privacy and security. The NPU adds enhancements to applications such as secure user authentication, content filtering, mixed reality, intelligent camera, and more.

For advanced photography, the Exynos 980 delivers compelling camera performances with resolution support for up to 108-megapixels (Mp). The advanced image signal processor (ISP) supports up to five individual sensors and is able to process three concurrently for richer multi-camera experiences.

In addition, the Exynos 980’s multi-format codec (MFC) supports encoding and decoding of 4K UHD video at 120 frames per second (fps). HDR10+ support with dynamic mapping also offers more detailed and illuminant colors in video content.

http://www.samsung.com/exynos

Monday, July 1, 2019

Samsung and SK Telecom test 5G standalone commercialization

Samsung Electronics and SK Telecom completed Korea’s first interoperability assessment between 5G Standalone (SA) Core and other commercial network systems over a 5G network, marking the final stage for verifying the validity of 5G SA data transmission and signifying that the SA system is ready to be launched for commercial service.

The 5G SA Core, jointly developed by Samsung Electronics and SK Telecom supports network slicing and function modularization based on 3GPP standards. It also offers additional functions that operators have been using since LTE, include billing, subscriber management and operational convenience system.

The companies also noted their use of data parallel processing technology for performing QoS and transmission control simultaneously; data acceleration technology for classifying and distributing similar traffic types; and path pptimization technology which automatically delivers data traffic to Mobile Edge Computing (MEC) platform.

“The fundamental structure of 5G SA is built on a completely new configuration, successfully delivering the most optimized 5G service to customers and enterprises across numerous industries,” said Jaeho Jeon, Executive Vice President and Head of R&D, Networks Business at Samsung Electronics. “Maintaining Korea’s leadership in network innovations through continuous investments in next-generation technologies is important to Samsung and SK Telecom, and the companies will continue to collaborate on developing and commercializing 5G SA.”

https://news.samsung.com/global/samsung-electronics-and-sk-telecom-advance-in-bringing-korea-closer-to-5g-standalone-commercialization

Tuesday, May 14, 2019

Samsung charts progress from 10nm to 3mm Gate-All-Around

Samsung Electronics is making rapid progress in 3nm Gate-All-Around (GAA) process technology, which could see first tape out in 2021 and mass market production as early as 2022.

Compared to 7nm technology, Samsung’s 3GAE process aims to deliver a 45% reduction in chip area with 50% percent lower power consumption, and 35% higher performance, potentially benefiting applications as diverse as mobile, network, automotive, Artificial Intelligence (AI) and IoT.   Samsung's GAA MBCFET (Multi-Bridge-Channel FET) uses a nanosheet architecture, enabling greater current per stack. WhileFinFET structures must modulate the number of fins in a discrete way, MBCFET™provides greater design flexibility by controlling the nanosheet width.

At Samsung Foundry Forum event in Santa Clara California, company executives outlined the fabrication roadmap from today's 10nm down to 3nm. Some highlights:
  • 14/10nm - these are in high volume manufacturing. These will remain long-lasting technologies into the future
  • 8nm - the most advanced non-EUV technology
  • 7nm FinFET - currently under mass production for mobile applications. The first tape out was in 2018. IP re-use is supported.
  • 6nm FinFET -- mass production of 6nm process devices in the second half of 2019
  • 5nm FinFET - the product design of Samsung’s 5nm FinFET process, which was developed in April, is expected to be completed in the second half of this year and go under mass production in the first half of 2020
  • 4nm FinFET - will represent the maximum scaling of the 7nm family, and development will be completed later this year - 
  • 3nm Gate-All-Around (GAA) process development is on track and will leverage MBCFET (Multi-Bridge-Channel FET) based on nanosheet technology. A Process Design Kit (PDK) version 0.1 for 3GAE was released in April. This will be the future beyond FinFET.
“We stand at the verge of the Fourth Industrial Revolution, a new era of high-performance computing and connectivity that will advance the daily lives of everyone on the planet,” said Dr. ES Jung, President and head of Foundry Business at Samsung Electronics. “Samsung Electronics fully understands that achieving powerful and reliable silicon solutions requires not only the most advanced manufacturing and packaging processes as well as design solutions, but also collaborative foundry-customer relationships grounded on trust and shared vision. This year’s Foundry Forum is filled with compelling evidence of our commitment to progress in all those areas, and we’re honored to host and converse with our industry’s best and brightest,” Dr. Jung added.

Monday, April 15, 2019

Samsung Electronics' 5nm EUV tech is ready for sampling

Samsung Electronics confirmed that its 5-nanometer (nm) FinFET process technology is complete in its development and ready for customers’ samples.

Compared to 7nm, Samsung’s 5nm FinFET process technology provides up to a 25 percent increase in logic area efficiency with 20 percent lower power consumption or 10 percent higher performance as a result of process improvement to enable us to have more innovative standard cell architecture.

In addition to power performance area (PPA) improvements from 7nm to 5nm, customers can fully leverage Samsung's highly sophisticated EUV technology. Like its predecessor, 5nm uses EUV lithography in metal layer patterning and reduces mask layers while providing better fidelity.

Another key benefit of 5nm is that we can reuse all the 7nm intellectual property (IP) to 5nm. Thereby 7nm customers' transitioning to 5nm will greatly benefit from reduced migration costs, pre-verified design ecosystem, and consequently, shorten their 5nm product development.

“In successful completion of our 5nm development, we’ve proven our capabilities in EUV-based nodes,” said Charlie Bae, Executive Vice President of Foundry Business at Samsung Electronics. “In response to customers' surging demand for advanced process technologies to differentiate their next-generation products, we continue our commitment to accelerating the volume production of EUV-based technologies.”


  • In October 2018, Samsung announced the readiness and its initial production of 7nm process, its first process node with EUV lithography technology. The company has provided commercial samples of the industry’s first EUV-based new products and has started mass production of 7nm process early this year.


Tuesday, April 9, 2019

Samsung claims biggest share of Korea's 5G rollout

Equipment from Samsung Electronics Co. represents the largest share the recent 5G network rollouts from all three mobile operates in Korea.

Korean operators have been transmitting 5G signals in Seoul and metropolitan areas since December 1, 2018 using 5G base station radios and 5G core solutions from Samsung’s Networks Business unit.

Specifically, Samsung has supplied 5G core solutions and more than 53,000 5G radio base stations to Korea’s three operators. The deployments used Samsung’s 5G Massive-MIMO Unit (MMU) radio base station in the 3.5GHz spectrum. The ability to re-use existing sites has been key to enabling the Korean operators to deploy a 5G network consisting of tens of thousands of radios within just a few months since the December 1st launch.

The virtualized 5G core solutions, provided to all three Korean operators for their 5G commercial launch, support both legacy 4G networks and next-generation 5G services in Non-Standalone (NSA) mode. Samsung will support the migration to Standalone (SA) mode through a future software upgrade. Samsung’s solution implements many of the key technologies of 5G networks, such as Control and User Plane Separation (CUPS), which are essential for network operators to scale their networks and support the new services enabled by 5G technology.

“Korea is one of the first markets in the world in which the 5G experience is opening up for consumers, and we’re thrilled to play a key role in the nationwide rollout of 5G with our unparalleled 5G network solutions,” said Paul Kyungwhoon Cheun, Executive Vice President and Head of Networks Business at Samsung Electronics. “As a longstanding innovator in the 5G space and one of the few vendors offering a full end-to-end 5G solution, Samsung is at the forefront of pushing the limits of 5G and beyond.”

Wednesday, March 20, 2019

SK Telecom and Samsung hit 2.65 Gbps with 4G+5G dual connectivity

SK Telecom and Samsung Electronics completed a network device interoperability test based on Dual Connectivity technology that used both 4G and 5G networks provided by Samsung's Networks Business.

The test, which was carried out at Samsung Electronics located in Suwon, Korea, used Samsung's commercial 4G and 5G NR end-to-end networks solutions which have been provided to the operator's current service. In addition, companies used Samsung's virtual core (vCore) that supports simultaneous 4G and 5G as well as its Galaxy S10 5G, Samsung's first 5G smartphone which was unveiled last month.

During the test, both companies have successfully achieved 2.65Gbps in data speeds on the 5G smartphone, combining both 1.5Gbps in 5G using 3.5GHz frequency (100MHz bandwidth) with 1.15Gbps in LTE using 1.8GHz, 2.1GHz, and 2.6GHz frequencies (65MHz bandwidth) all of which are for commercial use by SK Telecom.

SK Telecom calculates that it will be able to boost the overall transmission data speed by 80% by leveraging the 4G and 5G dual connectivity.

Dual connectivity is also known as 'E-UTRAN New Radio Dual Connectivity (EN-DC)' based on the 3GPP 5G New Radio (NR) standard.

https://www.samsung.com/global/business/networks/insights/news/sk-telecom-and-samsung-completed-4g-5g-network-dual-connectivity-test-achieving-265gbps/

Tuesday, March 19, 2019

Samsung debuts "Flashbolt" High Bandwidth Memory- 3.2 Gbps per pin

Samsung Electronics Co. announced its new High Bandwidth Memory (HBM2E) which promises to deliver the highest DRAM performance levels for use in next-generation supercomputers, graphics systems, and artificial intelligence (AI).

The new Flashbolt DRAM is the industry’s first HBM2E to deliver a 3.2 Gbps data transfer speed per pin, which is 33 percent faster than the previous-generation HBM2.

Flashbolt has a density of 16Gb per die, double the capacity of the previous generation. With these improvements, a single Samsung HBM2E package will offer a 410 gigabytes-per-second (GBps) data bandwidth and 16GB of memory.

“Flashbolt’s industry-leading performance will enable enhanced solutions for next-generation data centers, artificial intelligence, machine learning, and graphics applications,” said Jinman Han, senior vice president of Memory Product Planning and Application Engineering Team at Samsung Electronics. “We will continue to expand our premium DRAM offering, and improve our ‘high-performance, high capacity, and low power’ memory segment to meet market demand.”

Wednesday, March 13, 2019

Samsung intros 12GB DRAM for mobiles

Samsung Electronics Co. announced mass production of the industry’s first 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) package -- the highest-capacity mobile DRAM to date.

"With mass production of the new LPDDR4X, Samsung is now providing a comprehensive lineup of advanced memory to power the new era of smartphones, from 12GB mobile DRAM to 512GB eUFS 3.0 storage," said Sewon Chun, executive vice president of Memory Marketing at Samsung Electronics. "Moreover, with the LPDDR4X, we’re strengthening our position as the premium mobile memory maker best positioned to accommodate rapidly growing demand from global smartphone manufacturers."

The 12GB capacity was achieved by combining six 16-gigabit (Gb) LPDDR4X chips based on the second-generation 10nm-class (1y-nm) process into a single package. The new 12GB mobile memory delivers a data transfer rate of 34.1GB per second while minimizing the increase in power consumption inevitably caused by a boost in DRAM capacity.


Monday, February 25, 2019

Anritsu and Samsung Verify First 5G NR in Sub-6 GHz

Anritsu submitted the industry's first Protocol Conformance test in the Sub-6 GHz Frequency Range 1 (FR1) to 3GPP RAN5 working group for approval.

The test defined by 3GPP TS38.523 has been verified with the Exynos Modem 5100 5G New Radio (NR) modem developed by Samsung's System LSI Business on the Anritsu ME7834NR Protocol Conformance test system.

Anritsu offers a test platform for 3GPP-based Protocol Conformance Test (PCT) and Carrier Acceptance Testing (CAT) of mobile devices incorporating Multiple Radio Access Technologies (RAT). It supports 5G NR in both Standalone (SA) and Non-Standalone (NSA) mode, in addition to LTE, LTE-Advanced (LTE-A), LTE-A Pro, and W-CDMA. When combined with Anritsu's new OTA chamber MA8171A and RF converters, the ME7834NR covers the sub-6 GHz and millimeter wave (mmWave) 5G frequency bands.

"Anritsu continues to support our leading-edge technology development by providing quick access to the latest features on their test solutions," said Woonhaing Hur, Vice President of System LSI Protocol Development at Samsung Electronics. "5G is evolving at a much faster pace than previous technologies, and I am pleased to see that Anritsu is keeping ahead of the evolution as they did during LTE-Advanced and LTE-Advanced Pro."

"We are proud that Samsung continues to rely on our test solutions," said Mr. Tsutomu Tokuke, General Manager of Anritsu's Mobile Solutions Division. "Our collaboration with Samsung has helped us achieve yet another important industry milestone in the journey towards 5G NR commercialization."

Thursday, February 21, 2019

Samsung has shipped over 36,000 5G base stations

Samsung Electronics completed the development of its5G mmWave chipsets – comprised of Radio Frequency Integrated Circuits (RFICs) and Digital/Analog Front End (DAFE) Application-specific Integrated Circuits (ASICs) -- supporting 28GHz and 39GHz bands. The company said its chipset design, which is based on 28nm CMOS technology, enables about 25 percent reduction in size, weight and power consumption for 5G base stations when compared to the previous iterations.

Samsung’s new RFICs operate on bandwidths that have been expanded to a maximum 1.4GHz, compared to 800MHz for previous RFICs. The size of RFIC is reduced by 36 percent and overall performance is enhanced by decreasing the noise level and improving the linearity characteristics of the RF power amplifier. Samsung has developed RFIC solutions for 28GHz and 39GHz and plans to commercialize additional RFICs for 24GHz and 47GHz this year, allowing further expansions into markets that will use these higher frequency bands.

Samsung's DAFE ASIC provides analog-to-digital conversions and vice versa. The 5G DAFE manages large bandwidths of many that are hundreds of MHz and developing an ASIC allows for the reduction in size and power consumption of 5G base stations. Without investing in ASICs, the DAFE on its own would be too big and power insufficient to meet the product needs of carriers.

“Our breakthroughs in 5G R&D have been key driving forces behind successful 5G commercial services across the U.S. and Korea in 2018, with over 36,000 5G base station shipments,” said Paul Kyungwhoon Cheun, Executive Vice President and Head of Networks Business at Samsung Electronics. "At the forefront of ushering in the 4th Industrial Revolution, Samsung will continue to accelerate 5G commercialization, ultimately impacting industries and everyday lives by offering low latency, ultra-high speed, and massive connectivity.”

The company also noted that it has shipped over 36,000 5G base stations as of February.

Tuesday, January 29, 2019

Samsung breaks 1TB embedded flash threshold for mobiles

Samsung Electronics has begun mass producing the industry’s first one-terabyte (TB) embedded Universal Flash Storage (eUFS) 2.1, for use in mobiles, double the previous 512 MB max. The device uses 16 stacked layers of Samsung’s most advanced 512-gigabit (Gb) V-NAND flash memory and a newly developed proprietary controller.

Breaking the 1 TB barrier for smartphone storage comes just four years after introducing the first UFS solution, the 128-gigabyte (GB) eUFS.

“The 1TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. “What’s more, Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones in accelerating growth of the global mobile market.”

Samsung's 1TB eUFS can transfer data at up to 1,000 MB/s, the new eUFS features approximately twice the sequential read speed of a typical 2.5-inch SATA solid state drive (SSD).

Samsung plans to expand the production of its fifth-generation 512Gb V-NAND at its Pyeongtaek plant in Korea throughout the first half of 2019.

Thursday, January 3, 2019

Audi picks Samsung’s Exynos Auto V9 for In-vehicle Infotainment System

Audi has selected Samsung's automotive-branded processor, Exynos Auto V9, to power its next-generation in-vehicle infotainment (IVI) system, which is expected to make its debut by 2021.

The Exynos Auto V9 automotive processor is designed for advanced IVI systems that display content on multiple displays, providing information that assists drivers and passengers for a safer and more enjoyable in-vehicle experience. The 8-nanometer (nm) device packs ARM’s latest Cortex-A76 CPU cores, ARM Mali G76 GPU, premium HiFi 4 audio digital signal processor (DSP), intelligent neural processing unit (NPU), and a safety island core that supports Automotive Safety Integrity Level (ASIL)-B standards. The processor also supports fast and power-efficient LPDDR4 and LPDDR5 DRAM.

“Audi thrives to bring the most exciting, yet the safest automobiles when we vision the drive of tomorrow,” said Alfons Pfaller, head of Architecture & Platform Development E/E at Audi. “Samsung has been a valued technology partner over the past few years and we are extremely pleased to have the Exynos Auto V9 power our next-generation platform that will shape the future in-vehicle infotainment experiences.”

Monday, December 3, 2018

Verizon promises Samsung 5G phones in 1H19

Verizon and Samsung will launch their first commercial 5G smartphones in the first half of 2019.  Verizon has previously disclosed plans for its 5G mobility service to live in early 2019 and expand rapidly. It already has a fixed 5G residential service in parts of Houston, Indianapolis, Los Angeles and Sacramento.

Qualcomm is hosting its annual Qualcomm Snapdragon Technology Summit in Maui this week where a prototype will be unveiled. The unit will be powered by the upcoming flagship Qualcomm® Snapdragon Mobile Platform with the Snapdragon X50 5G NR modem and antenna modules with integrated RF transceiver, RF front-end and antenna elements.

“5G will usher in a new era of mobile connectivity, allowing people to connect to data, experiences and other people in ways never thought possible,” said Brian Higgins, vice president, wireless device and product marketing at Verizon. “Together, Samsung and Verizon have made huge gains in bringing 5G commercial services to consumers in several cities. Now, we’re partnering to create a smartphone to put the power of 5G in the palm of your hand.”

“Samsung offers end-to-end solutions that are accelerating the wide scale adoption of 5G and help us realize our vision of truly connected living,” said Justin Denison, senior vice president, Mobile Product Strategy and Marketing at Samsung Electronics America. “We’re proud to work alongside innovative partners like Verizon and Qualcomm Technologies to deliver a smartphone that will fundamentally transform how people work and play.”

Tuesday, November 27, 2018

Samsung launches 4 TB consumer SSD

Samsung Electronics America announced commercial availability of new consumer solid state drives (SSD) — the Samsung 860 QVO SSD — featuring up to four terabytes (TB) of storage capacity at "approachable prices." MSRP starts at $149.99 for a 1TB model.

The new drives leverage the company’s high-density 4-bit multi-level cell (MLC) NAND flash architecture, SATA interface and 2.5-inch form factor. Sequential read and write speeds of up to 550 MB/s and 520 MB/s, respectively.

Tuesday, November 13, 2018

Samsung's Exynos 9 Series 9820 Processor integrates 2.0 Gbps LTE Advanced Pro modem

Samsung Electronics unveiled its latest premium application processor (AP), the Exynos 9 Series 9820, equipped with a separate hardware AI-accelerator for on-device Artificial Intelligence (AI) applications.

The Exynos 9820 features a fourth-generation custom CPU, 2.0-gigabits-per-second (Gbps) LTE Advanced Pro modem, and an enhanced neural processing unit (NPU) to bring new smart experiences to mobile devices. The fourth-generation custom core delivers around 20-percent improvement in single core performance or 40-percent in power efficiency when compared to its predecessor which can load data or switch between apps much faster. In addition, the multi-core performance is also increased by around 15 percent. The new mobile processor embeds the latest Mali-G76 GPU cores, which deliver a 40-percent performance boost or 35-percent power savings, allowing longer play time of graphic-intensive mobile games or interactive AR applications.

“As AI-related services expand and their utilization diversify in mobile devices, their processors require higher computational capabilities and efficiency,” said Ben Hur, vice president of System LSI marketing at Samsung Electronics. “The AI capabilities in the Exynos 9 Series 9820 will provide a new dimension of performance in smart devices through an integrated NPU, high-performance fourth-generation custom CPU core, 2.0Gbps LTE modem and improved multimedia performance.”

http://www.samsung.com/exynos

Sunday, October 28, 2018

Samsung demos 5G in India

Samsung will participate in India’s first large-scale 5G trial, scheduled to take place in the first quarter of 2019, in collaboration with the Department of Telecommunications (DoT).

Samsung is showcasing 5G at this week's India Mobile Congress 2018 in New Delhi. Demos include 5G home broadband services, Smart Cities and Smart Agriculture. Samsung’s 5G Skyship, which was developed in partnership with Korea Telecom, will be flying over the exhibition center to demonstrate first response use cases.

Samsung notes that it built the world’s largest greenfield and the most advanced 4G LTE networks nationwide by partnering with Reliance Jio, covering 99% of the Indian population, equivalent to 1.3 billion people.

Sunday, October 21, 2018

NEC and Samsung near 5G base station accord

NEC and Samsung Electronics are close to announcing a strategic alliance in 5G base stations, according to numerous sources over the weekend.

Samsung is already a key supplier of network infrastructure to KDDI.  An alliance with NEC could help open doors to NTT Docomo.


KDDI and Samsung prove 5G mmWave works at 190 kmh

KDDI and Samsung Electronics completed a series of 5G tests which demonstrate the viability and performance of 5G millimeter wave mobility solutions while traveling at speeds over 190km per hour.

The demonstration, which took place at 'Everland SPEEDWAY' in Korea, involved a battery of individual tests to examine the performance of Samsung's end-to-end 5G mmWave technology. Specifically, as a vehicle accelerated from 0 to 205km per hour on the race track between multiple 5G base stations, the test measured and evaluated a variety of metrics, including handover interruption time, uplink and downlink throughput stability, and latency stability (or "jitter").

In addition, KDDI and Samsung also demonstrated a successful handover scenario, with Samsung's 5G device attaching to the 5G base station as it approached the service area, and successfully being handed over to the target cell at a speed of 192km per hour (GPS speed).


NEC announces agreement to supply 5G base stations to NTT DOCOMO

NEC announced an agreement to supply 5G base station equipment to NTT DOCOMO. Financial terms were not disclosed. Docomo aims to launch 5G in 2020.

Under this new agreement, NEC will achieve 5G compatibility through software upgrades and a minimal replacement of hardware to maximize the use of existing high-density base station equipment.  NEC said it will provide updates that enable existing high-density base stations to be fully compatible with 5G while continuing to deliver LTE/LTE-Advanced services.

This includes base station equipment that NEC has been supplying to DOCOMO since February 2015. This equipment is already compatible with the advanced Centralized Radio Access Network (C-RAN) architecture advocated by
DOCOMO, and is now being utilized as a base station control unit.

"DOCOMO aims to deploy and expand our commercial 5G services efficiently by maximizing the use of existing communications equipment," said, Hiroshi Nakamura, Executive Vice President, Chief Technology Officer and Member of the Board of Directors, NTT DOCOMO. " This agreement with NEC is in line with that policy and we expect it to make a significant contribution to our 5G services. Going forward, DOCOMO accelerates co-creation of new services and businesses with vertical industry partners."

Wednesday, October 17, 2018

Samsung previews FPGA-powered SSDs for accelerated data

At a Tech Day event in San Jose, Samsung Electronics previewed a FPGA-powered SSD featured accelerated data processing and the ability to bypass current generation server CPU limits.

Samsung's forthcoming SmartSSD leverages quad-level cell (QLC)-SSD technology and an FPGA accelerator in the SSD unit for higher processing performance, improved time-to-insight, more virtual machines (VM), scalable performance, better de-duplication and compression, lower power usage and fewer CPUs per system.


At the event, Samsung also highlighted 7nm EUV process node technology from it foundry business unit.  This promises significant improvements in power, performance and area. Initial wafer production of Samsung’s 7nm LPP (Low Power Plus) EUV process node is expected to deliver a respective maximum of 40-percent area reduction, 50-percent dynamic power reduction and 20-percent performance increase over 10nm processes. EUV uses 13.5nm wavelength light to expose silicon wafers as opposed to conventional argon fluoride (ArF) immersion technologies that are only able to achieve 193nm wavelengths and require expensive multi-patterning mask sets.

Samsung said the advancement of its 7LPP process also puts it forward  on a direct path forward to 3nm.

“With the introduction of its EUV process node, Samsung has led a quiet revolution in the semiconductor industry,” said Charlie Bae, executive vice president of foundry sales and marketing team at Samsung Electronics. “This fundamental shift in how wafers are manufactured gives our customers the opportunity to significantly improve their products’ time to market with superior throughput, reduced layers, and better yields. We’re confident that 7LPP will be an optimal choice not only for mobile and HPC, but also for a wide range of cutting-edge applications.”
Samsung also previewed a 256-gigabyte (GB) 3DS (3-dimensional stacking) RDIMM (registered dual in-line memory module), based on 10nm-class 16-gigabit (Gb) DDR4 DRAM.  This will double current maximum DRAM capacity to deliver higher performance and lower power consumption.

See also