Showing posts with label Micron. Show all posts
Showing posts with label Micron. Show all posts

Wednesday, October 10, 2018

Micron to invest $100 million in AI start-ups

Micron announced plans to invest up to $100 million in startups focused on artificial intelligence (AI), with twenty percent aimed at startups led by women and other underrepresented groups. The company has been investing in tech start-ups in its sector since 2006 via its Micron Ventures arm.

Micron will also offer a $1 million grant for universities and non-profit organizations to conduct research on AI.

"We are pleased to bring together the industry's brightest thinkers, researchers, innovators and technologists to discuss AI, machine learning and deep learning," said Micron President and CEO Sanjay Mehrotra. "These trends are at the heart of the biggest opportunities in front of us, and increasingly require memory and storage technologies to turn vast amounts of data into insights that accelerate intelligence."

The announcements were made at the inaugural Micron Insight 2018 event in San Francisco, which included leaders from Amazon, BMW, Google, Qualcomm, Microsoft, NVIDIA, and Visteon, along with author, cosmic explorer and MIT professor of physics, Max Tegmark.

http://bit.ly/MicronFoundation

Sunday, April 17, 2016

Micron Launches NVMe PCIe SSDs for Data Centers

Micron Technology announced a new portfolio of NVMe PCIe solid state drives (SSDs) aimed at scale-out data centers. The idea is to bring nonvolatile memory as close as possible to the processor.

Micron said it sees many customers toward server-based storage instead of SANs of frame-arrays because of the changing computing landscape.  Many hyperscale companies are using server-based storage for consistent, accelerated access to data.

The line-up includes:
  • Micron 9100 NVMe PCIe SSD  -- up to 10x faster compared to a single data center SATA SSD. Offers 3.2TB of storage in both a HHHL & a 2.5" U.2 form factor. The U.2 form factor of Micron's 9100 SSD allows front-bay access to the server, delivering a recognizable form, fit and function.
  • Micron 7100 NVMe PCIe SSD -- brings higher performance and lower TCO. Offers a slim 7mm U.2 (2.5") hot-pluggable form factor. It uses half as many watts as a standard high-performance NVMe drive but provides low latencies unachievable by SATA SSDs. 
  • Micron S600DC SAS SSDs -- greater capacity, better performance and higher endurance at a much more affordable price point compared to 15K HDDs. The S600DC SSD offers 4TB of storage in a 2.5" form factor - more than double the capacity 10K 2.5" HDDs and 4x the capacity of 15K HDDs. 
Micron also announced a set of purpose-built, scale-out accelerated solutions for open source and software-defined data centers. The first suite of Micron Accelerated Solutions are built with key enterprising software and hardware partners including VMware, Supermicro and Nexenta. Some highlights:

  • Micron Accelerated Solution for VMware Virtual SAN Ready Nodes -- Micron, Supermicro and VMware have partnered to design all-flash Ready Nodes that enable VMware vSphere administrators to future-proof their data center architecture using all-flash, delivering compelling all-flash performance. The companies claim up to 40X IOPs and bandwidth improvement compared to hybrid VMware Virtual SAN implementations that include traditional HDD. The Micron Accelerated Solution for VMware Virtual SAN Ready Nodes offer deduplication, compression and erasure coding. The VMware Virtual SAN All-Flash Ready Nodes can be purchased for as low as $0.44/GB (effective capacity) which includes the full MSRP of all server hardware, software and three-year support.
  • Micron Accelerated Ceph Storage Solution -- leveraging an open source object storage solution that runs on Linux software that hits 1M IOPS and reaches 140Gbps throughput. The all-flash Ceph storage solution allows customers to stand up a dynamic cloud infrastructure.
  • Micron Accelerated NexentaEdge Solution -- a full featured all-flash block and object storage based on NexentaEdge scale-out Software-Defined Storage. The Micron Accelerated NexentaEdge Solution will provide high performance native block, iSCSI block, Swift and S3 object services to OpenStack, VMware and Container based infrastructure. NexentaEdge provides unlimited instant snapshots and clones, as well as patented cluster-wide inline deduplication and compression.This collaboration is expected to result in a joint reference architecture and purchasable solution from Supermicro in the second half of 2016.

http://www.micron.com


Tuesday, November 10, 2015

Micron Debuts DDR4 NVDIMM, Combining DRAM with NAND Flash

Micron Technology introduced a persistent memory technology that combines the low-latency benefits of DRAM with the lower cost of NAND Flash. The NVDIMM technology from Micron could play a key role in data center server design, allowing greater volumes of data to be stored closer to the CPU, boosting the performance of applications such as big data analytics, storage appliances, RAID cache, In-Memory Databases and On Line Transaction Processing.

Micron is now producing 8GB DDR4 NVDIMM, the company's first commercially available solution in the persistent memory category.  In the event of a power failure or system crash, Micron's NVDIMM solution provides an onboard controller that safely transfers data stored in DRAM to the onboard non-volatile memory, thereby preserving the data that would otherwise be lost.

"Micron is delivering on the promise of persistent memory with a solution that gives system architects a new approach for designing systems with better performance, reduced energy usage and improved total cost of ownership," said Tom Eby, vice president for Micron's compute and networking business unit. "With NVDIMM, we have a powerful solution that is available today. We're also leading the way on future persistent memory development by spearheading R&D efforts on promising new technologies such as 3D XPoint™ memory, which will be available in 2016 and beyond."

http://www.micron.com/persistentmemory

Intel and Micron Unveil 3D XPoint Memory 1000x Faster than NAND

Intel and Micron Technology have developed a non-volatile memory that is up to 1,000 times faster and has up to 1,000 times greater endurance than NAND, and is 10 times denser than conventional memory.

The 3D XPoint technology, which is now entering production, is described as the first new memory category since the introduction of NAND flash in 1989.

"For decades, the industry has searched for ways to reduce the lag time between the processor and data to allow much faster analysis," said Rob Crooke, senior vice president and general manager of Intel's Non-Volatile Memory Solutions Group. "This new class of non-volatile memory achieves this goal and brings game-changing performance to memory and storage solutions."

"One of the most significant hurdles in modern computing is the time it takes the processor to reach data on long-term storage," said Mark Adams, president of Micron. "This new class of non-volatile memory is a revolutionary technology that allows for quick access to enormous data sets and enables entirely new applications."

Intel said the 3D XPoint technology follows more than a decade of research and development. The innovative, transistor-less cross point architecture creates a three-dimensional checkerboard where memory cells sit at the intersection of word lines and bit lines, allowing the cells to be addressed individually. As a result, data can be written and read in small sizes, leading to faster and more efficient read/write processes.

http://newsroom.intel.com/community/intel_newsroom/blog/2015/07/28/intel-and-micron-produce-breakthrough-memory-technology


In March 2015, Intel and Micron Technology announced availability of their 3D NAND technology, the world's highest-density flash memory, for use in data center servers, laptops, tablets and mobile devices.

Tuesday, July 28, 2015

Intel and Micron Unveil 3D XPoint Memory 1000x Faster than NAND

Intel and Micron Technology have developed a non-volatile memory that is up to 1,000 times faster and has up to 1,000 times greater endurance than NAND, and is 10 times denser than conventional memory.

The 3D XPoint technology, which is now entering production, is described as the first new memory category since the introduction of NAND flash in 1989.

"For decades, the industry has searched for ways to reduce the lag time between the processor and data to allow much faster analysis," said Rob Crooke, senior vice president and general manager of Intel's Non-Volatile Memory Solutions Group. "This new class of non-volatile memory achieves this goal and brings game-changing performance to memory and storage solutions."

"One of the most significant hurdles in modern computing is the time it takes the processor to reach data on long-term storage," said Mark Adams, president of Micron. "This new class of non-volatile memory is a revolutionary technology that allows for quick access to enormous data sets and enables entirely new applications."

Intel said the 3D XPoint technology follows more than a decade of research and development. The innovative, transistor-less cross point architecture creates a three-dimensional checkerboard where memory cells sit at the intersection of word lines and bit lines, allowing the cells to be addressed individually. As a result, data can be written and read in small sizes, leading to faster and more efficient read/write processes.

http://newsroom.intel.com/community/intel_newsroom/blog/2015/07/28/intel-and-micron-produce-breakthrough-memory-technology


In March 2015, Intel and Micron Technology announced availability of their 3D NAND technology, the world's highest-density flash memory, for use in data center servers, laptops, tablets and mobile devices.


The new 3D NAND technology, which was jointly developed by Intel and Micron, stacks layers of data storage cells vertically to create storage devices with three times higher capacity than competing NAND technologies.  The companies have been able to package up to 48GB of NAND per die — enabling three-fourths of a terabyte to fit in a single fingertip-sized package.  A 256Gb MLC version of 3D NAND currently is sampling with select partners, and a 384Gb TLC design will be sampling later this spring.

Monday, July 13, 2015

WSJ: Tsinghua Unigroup Bids for Micron

Micron Technology, which makes DRAM and NAND memories, is the target of a $23 billion acquisition offer from Tsinghua Unigroup of China, according to The Wall Street Journal.  Neither company has confirmed the report.

http://www.micron.com/


  • Tsinghua Unigroup is 51% owned by Tsinghua Holdings and 49% owned by Beijing Jiankun Investment Group.   It has previously acquired Spreadtrum and RDA Microelectronics.  Tsinghua Holdings is controlled by Tsinghua University in Beijing.


Intel and Micron Announce 3D NAND Flash Memory

Intel and Micron Technology announced availability of their 3D NAND technology, the world's highest-density flash memory, for use in data center servers, laptops, tablets and mobile devices.


The new 3D NAND technology, which was jointly developed by Intel and Micron, stacks layers of data storage cells vertically to create storage devices with three times higher capacity than competing NAND technologies.  The companies have been able to package up to 48GB of NAND per die — enabling three-fourths of a terabyte to fit in a single fingertip-sized package.  A 256Gb MLC version of 3D NAND currently is sampling with select partners, and a 384Gb TLC design will be sampling later this spring.

"Micron and Intel's collaboration has created an industry-leading solid-state storage technology that offers high density, performance and efficiency and is unmatched by any flash today," said Brian Shirley, vice president of Memory Technology and Solutions at Micron Technology. "This 3D NAND technology has the potential to create fundamental market shifts. The depth of the impact that flash has had to date—from smartphones to flash-optimized supercomputing—is really just scratching the surface of what's possible."

Monday, June 23, 2014

Micron Collaborates with Intel on Knights Landing

Micron Technology is working with Intel to deliver an on-package memory solution for Intel's next-generation Xeon Phi processor, codenamed Knights Landing. The on-going collaboration leverages fundamental DRAM and stacking technologies also found in Micron's Hybrid Memory Cube products.

The on package memory combines high-speed logic and DRAM layers into one optimized package that will set a new industry benchmark for performance and energy efficiency. Intel said Knights Landing will deliver 5X the sustained memory bandwidth versus DDR4 with one-third the energy per bit in half the footprint.

"Intel's many integrated cores (MIC) architecture and Micron's high performance memory is a formidable combination," said Tom Eby, vice president for Micron's compute and networking business unit. "Intel's and Micron's advanced technologies successfully marry the processor to a memory system that delivers the very rare coupling of low power and extreme bandwidth."

"The next-generation Intel® Xeon Phi processor, codenamed Knights Landing, will launch with up to 16GB of high performance, on-package memory that delivers dramastically improved the sustained memory bandwidth versus DDR4 and brings tremendous power-efficiency and space-savings. It is the first Intel HPC processor to use this new high performance on package memory," said Charles Wuischpard, Vice President, General Manager, Workstations and High Performance Computing Data Center Group at Intel. "This will allow the world's leading researchers, scientists, and engineers to run larger workloads faster while maintaining current code investments. We're pleased to be working with Micron to deliver it."

http://investors.micron.com/releasedetail.cfm?ReleaseID=856057


More on Micron's Hybrid Memory Cube


See also