Showing posts with label Memory. Show all posts
Showing posts with label Memory. Show all posts

Tuesday, March 19, 2019

Samsung debuts "Flashbolt" High Bandwidth Memory- 3.2 Gbps per pin

Samsung Electronics Co. announced its new High Bandwidth Memory (HBM2E) which promises to deliver the highest DRAM performance levels for use in next-generation supercomputers, graphics systems, and artificial intelligence (AI).

The new Flashbolt DRAM is the industry’s first HBM2E to deliver a 3.2 Gbps data transfer speed per pin, which is 33 percent faster than the previous-generation HBM2.

Flashbolt has a density of 16Gb per die, double the capacity of the previous generation. With these improvements, a single Samsung HBM2E package will offer a 410 gigabytes-per-second (GBps) data bandwidth and 16GB of memory.

“Flashbolt’s industry-leading performance will enable enhanced solutions for next-generation data centers, artificial intelligence, machine learning, and graphics applications,” said Jinman Han, senior vice president of Memory Product Planning and Application Engineering Team at Samsung Electronics. “We will continue to expand our premium DRAM offering, and improve our ‘high-performance, high capacity, and low power’ memory segment to meet market demand.”

Wednesday, March 13, 2019

Samsung intros 12GB DRAM for mobiles

Samsung Electronics Co. announced mass production of the industry’s first 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) package -- the highest-capacity mobile DRAM to date.

"With mass production of the new LPDDR4X, Samsung is now providing a comprehensive lineup of advanced memory to power the new era of smartphones, from 12GB mobile DRAM to 512GB eUFS 3.0 storage," said Sewon Chun, executive vice president of Memory Marketing at Samsung Electronics. "Moreover, with the LPDDR4X, we’re strengthening our position as the premium mobile memory maker best positioned to accommodate rapidly growing demand from global smartphone manufacturers."

The 12GB capacity was achieved by combining six 16-gigabit (Gb) LPDDR4X chips based on the second-generation 10nm-class (1y-nm) process into a single package. The new 12GB mobile memory delivers a data transfer rate of 34.1GB per second while minimizing the increase in power consumption inevitably caused by a boost in DRAM capacity.


Wednesday, January 16, 2019

Photonic memory research at Eindhoven University of Technology

Researchers of the Institute of Photonic Integration of the Eindhoven University of Technology are developing a hybrid memory that combines photonic properties and magnetic hard drives.

The idea is to use femtosecond light pulses to write data directly in a magnetic memory.

"The switching of the magnetization direction using the single-pulse all-optical switching is in the order of picoseconds, which is about a 100 to 1000 times faster than what is possible with today's technology. Moreover, as the optical information is stored in magnetic bits without the need of energy-costly electronics, it holds enormous potential for future use in photonic integrated circuits," states Mark Lalieu, Ph.D. candidate at the Applied Physics Department of TU/e.

https://www.tue.nl/en/news/news-overview/10-01-2019-next-generation-photonic-memory-devices-are-light-written-ultrafast-and-energy-efficient/



Thursday, July 19, 2018

Samsung develops 8-gigabit LPDDR5 DRAM for 5G mobile devices

Samsung Electronics is ready to begin mass production of the first 10-nm class 8-gigabit LPDDR5 DRAM for use in upcoming 5G and Artificial Intelligence (AI)-powered mobile applications including smartphones and automobiles.

The 10nm-class LPDDR5 DRAM will be available in two bandwidths – 6,400Mb/s at a 1.1 operating voltage (V) and 5,500Mb/s at 1.05V.

The new memory incorporates a number of innovations including to lower its voltage in accordance with the operating speed of the corresponding application processor, when in active mode. There is also a deep sleep mode which cuts power to approximately half of the idle mode. Samsung estimates power savings of up to 30% over the previous generation.

The newly-developed 8Gb LPDDR5 is the latest addition to Samsung’s premium DRAM lineup, which includes 10nm-class 16Gb GDDR6 DRAM (in volume production since December 2017) and 16Gb DDR5 DRAM (developed in February).

“This development of 8Gb LPDDR5 represents a major step forward for low-power mobile memory solutions,” said Jinman Han, senior vice president of Memory Product Planning & Application Engineering at Samsung Electronics. “We will continue to expand our next-generation 10nm-class DRAM lineup as we accelerate the move toward greater use of premium memory across the global landscape.”

Tuesday, May 29, 2018

Samsung hits mass production of 10nm-Class 32GB DDR4

Samsung Electronics Co. started mass producing the industry’s first 32-gigabyte (GB) double data rate 4 (DDR4) memory.

The small outline dual in-line memory modules (SoDIMMs) are used in gaming laptops.

Samsung said that compared to its 16GB SoDIMM based on 20nm-class 8-gigabit (Gb) DDR4, which was introduced in 2014, the new 32GB module doubles the capacity while being 11 percent faster and approximately 39 percent more energy efficient. A 64GB laptop configured with two 32GB DDR4 modules consumes less than 4.6 watts (W) in active mode and less than 1.4W when idle.

Tuesday, April 3, 2018

Kingston intros consumer-grade PCIe NVMe SSD using 3D NAND

Kingston Digital introduced a line of entry-level consumer-grade PCIe NVMe SSD utilizing 3D NAND for notebooks and desktop. The drive is available in 240GB, 480GB and 960GB2 capacities,

The single-sided M.2 2280 (22mm x 80mm) form factor makes SSD features a Gen 3.0 x2 interface, 4-channel Phison 5008 controller, and 3D NAND Flash. It delivers 2x the performance of SATA SSDs with read/write speeds up to 1500MB/s and 1000MB/s.

Some key specs

Interface: PCIe NVMe Gen 3.0 x2 Lanes
Controller: Phison 5008
NAND: 3D TLC
Sequential Read/Write:

  • 240GB: up to 1,500/800MB/s
  • 480GB: up to 1,500/900MB/s
  • 960GB: up to 1,500/1,000MB/s

Random 4K Read/Write:

  • 240GB: up to 100,000/80,000MB/s
  • 480GB: up to 100,000/90,000MB/s
  • 960GB: up to 120,000/100,000MB/s

MTBF: 1 million hours

Monday, January 22, 2018

Integral Memory debuts 512GB microSDXC card

Integral Memory plc is introducing a 512GB microSDXC V10 UHS-I U1 memory card.

The new card meets the Video Speed Class 10 (V10) standard, ensuring fast data transfer of Full HD video on devices including digital cameras, action cams, drones and camcorders.

http://www.integralmemory.com

Wednesday, January 17, 2018

Samsung ramps 16-Gigabit GDDR6 for advanced graphics

Samsung Electronics Co. has commenced mass production of the industry’s first 16-gigabit (Gb) Graphics Double Data Rate 6 (GDDR6) memory for use in advanced graphics processing for gaming devices and graphics cards as well as automotive, network and artificial intelligence systems.

Samsung's new 16Gb GDDR6 memory is built on advanced 10-nanomter (nm) class process technology, and performs at an 18-gigabits-per-second (Gbps) pin speed with data transfers of 72 gigabytes per second (GBps), which represents a more than two-fold increase over 8Gb GDDR5 with its 8Gbps pin speed.

Thursday, July 14, 2016

Toshiba and WD Inaugurate Flash Memory Fab in Japan

Toshiba and Western Digital celebrated the opening of the New Fab 2 semiconductor fabrication facility located in Yokkaichi, Mie Prefecture, Japan.

The new facility will support the conversion of the companies’ 2D NAND capacity to 3D flash memory, allowing realization of solutions offering higher densities and better device performance. Construction began in September 2014.

Satoshi Tsunakawa, President and CEO of Toshiba Corporation, said, “Advanced technologies underline our commitment to respond to continued demand as an innovator in flash memory. We are enhancing manufacturing efficiency and the quality of our world-class facility. Building on that, we also plan investments of as much as 860 billion yen by FY2018, in line with the market situation. Our commitment is firm, and we are confident that our joint venture with Western Digital will produce cost competitive next generation memories at Yokkaichi.”

http://www.toshiba.com

Saturday, June 11, 2016

HPE Brings The Machine to Open Source community

HPE intends to support open source software on its futuristic platform billed as "The Machine." The company announced its intent to bring The Machine to open source developers very early in the software development cycle.

The Machine, which has been a long-term research project of HP Labs, promises to overturn 60-years of processor-centric platforms with a new paragidm based on memory-centric architecture.

HP said it will start familiarizing developers with its new programming model as well as invite them to help develop the software itself. An initial release of developer tools is expected in the coming month, including the following four contributions of code:

  1. Fast optimistic engine for data unification services: A completely new database engine that speeds up applications by taking advantage of a large number of CPU cores and non-volatile memory (NVM).
  2. Fault-tolerant programming model for non-volatile memory: Adapts existing multi-threaded code to store and use data directly in persistent memory. Provides simple, efficient fault-tolerance in the event of power failures or program crashes.
  3. Fabric Attached Memory Emulation: An environment designed to allow users to explore the new architectural paradigm of The Machine.
  4. Performance emulation for non-volatile memory bandwidth: A DRAM-based performance emulation platform that leverages features available in commodity hardware to emulate different latency and bandwidth characteristics of future byte-addressable NVM technologies.

HPE is also planning changes to Linux that enable it to run on The Machine, as well as example applications that demonstrate how The Machine can significantly improve application scale and performance.

http://www.hpe.com

Monday, April 4, 2016

Samsung: First 10-Nanometer Class DRAM Enters Production

Samsung Electronics announced the start of mass production of the industry’s first 10-nanometer (nm) class, 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips and the modules derived from them. The milestone is expected to accelerate the industry-wide shift to advanced DDR4 products.

The production of Samsung's 10nm-class DRAM uses ArF (argon fluoride) immersion lithography, free from the use of EUV (extreme ultra violet) equipment.

“Samsung’s 10nm-class DRAM will enable the highest level of investment efficiency in IT systems, thereby becoming a new growth engine for the global memory industry,” said Young-Hyun Jun, President of Memory Business, Samsung Electronics. “In the near future, we will also launch next-generation, 10nm-class mobile DRAM products with high densities to help mobile manufacturers develop even more innovative products that add to the convenience of mobile device users.”

The new DRAM supports a data transfer rate of 3,200 Mbps, which is more than 30 percent faster than the 2,400Mbps rate of 20nm DDR4 DRAM. Also, new modules produced from the 10nm-class DRAM chips consume 10 to 20 percent less power, compared to their 20nm-process-based equivalents, which will improve the design efficiency of next-generation, high-performance computing (HPC) systems and other large enterprise networks, as well as being used for the PC and mainstream server markets.

http://www.samsung.com

Monday, June 23, 2014

Micron Collaborates with Intel on Knights Landing

Micron Technology is working with Intel to deliver an on-package memory solution for Intel's next-generation Xeon Phi processor, codenamed Knights Landing. The on-going collaboration leverages fundamental DRAM and stacking technologies also found in Micron's Hybrid Memory Cube products.

The on package memory combines high-speed logic and DRAM layers into one optimized package that will set a new industry benchmark for performance and energy efficiency. Intel said Knights Landing will deliver 5X the sustained memory bandwidth versus DDR4 with one-third the energy per bit in half the footprint.

"Intel's many integrated cores (MIC) architecture and Micron's high performance memory is a formidable combination," said Tom Eby, vice president for Micron's compute and networking business unit. "Intel's and Micron's advanced technologies successfully marry the processor to a memory system that delivers the very rare coupling of low power and extreme bandwidth."

"The next-generation Intel® Xeon Phi processor, codenamed Knights Landing, will launch with up to 16GB of high performance, on-package memory that delivers dramastically improved the sustained memory bandwidth versus DDR4 and brings tremendous power-efficiency and space-savings. It is the first Intel HPC processor to use this new high performance on package memory," said Charles Wuischpard, Vice President, General Manager, Workstations and High Performance Computing Data Center Group at Intel. "This will allow the world's leading researchers, scientists, and engineers to run larger workloads faster while maintaining current code investments. We're pleased to be working with Micron to deliver it."

http://investors.micron.com/releasedetail.cfm?ReleaseID=856057


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