Showing posts with label DRAM. Show all posts
Showing posts with label DRAM. Show all posts

Wednesday, March 25, 2020

Samsung ramps up module manufacturing with extreme ultraviolet tech

Samsung Electronics has shipped one million of the industry's first 10nm-class (D1x) DDR4 (Double Date Rate 4) DRAM modules based on extreme ultraviolet (EUV) technology.

"With the production of our new EUV-based DRAM, we are demonstrating our full commitment toward providing revolutionary DRAM solutions in support of our global IT customers,” said Jung-bae Lee, executive vice president of DRAM Product & Technology at Samsung Electronics. "This major advancement underscores how we will continue contributing to global IT innovation through timely development of leading-edge process technologies and next-generation memory products for the premium memory market."

Samsung said it is the first to adopt EUV in DRAM production to overcome challenges in DRAM scaling. EUV technology reduces repetitive steps in multi-patterning and improves patterning accuracy, enabling enhanced performance and greater yields as well as shortened development time. EUV will be fully deployed in Samsung's future generations of DRAM, starting with its fourth-generation 10nm-class (D1a) or the highly-advanced 14nm-class, DRAM. Samsung expects to begin volume production of D1a-based DDR5 and LPDDR5 next year, which would double manufacturing productivity of the 12-inch D1x wafers.

Tuesday, March 19, 2019

Samsung debuts "Flashbolt" High Bandwidth Memory- 3.2 Gbps per pin

Samsung Electronics Co. announced its new High Bandwidth Memory (HBM2E) which promises to deliver the highest DRAM performance levels for use in next-generation supercomputers, graphics systems, and artificial intelligence (AI).

The new Flashbolt DRAM is the industry’s first HBM2E to deliver a 3.2 Gbps data transfer speed per pin, which is 33 percent faster than the previous-generation HBM2.

Flashbolt has a density of 16Gb per die, double the capacity of the previous generation. With these improvements, a single Samsung HBM2E package will offer a 410 gigabytes-per-second (GBps) data bandwidth and 16GB of memory.

“Flashbolt’s industry-leading performance will enable enhanced solutions for next-generation data centers, artificial intelligence, machine learning, and graphics applications,” said Jinman Han, senior vice president of Memory Product Planning and Application Engineering Team at Samsung Electronics. “We will continue to expand our premium DRAM offering, and improve our ‘high-performance, high capacity, and low power’ memory segment to meet market demand.”

Thursday, July 19, 2018

Samsung develops 8-gigabit LPDDR5 DRAM for 5G mobile devices

Samsung Electronics is ready to begin mass production of the first 10-nm class 8-gigabit LPDDR5 DRAM for use in upcoming 5G and Artificial Intelligence (AI)-powered mobile applications including smartphones and automobiles.

The 10nm-class LPDDR5 DRAM will be available in two bandwidths – 6,400Mb/s at a 1.1 operating voltage (V) and 5,500Mb/s at 1.05V.

The new memory incorporates a number of innovations including to lower its voltage in accordance with the operating speed of the corresponding application processor, when in active mode. There is also a deep sleep mode which cuts power to approximately half of the idle mode. Samsung estimates power savings of up to 30% over the previous generation.

The newly-developed 8Gb LPDDR5 is the latest addition to Samsung’s premium DRAM lineup, which includes 10nm-class 16Gb GDDR6 DRAM (in volume production since December 2017) and 16Gb DDR5 DRAM (developed in February).

“This development of 8Gb LPDDR5 represents a major step forward for low-power mobile memory solutions,” said Jinman Han, senior vice president of Memory Product Planning & Application Engineering at Samsung Electronics. “We will continue to expand our next-generation 10nm-class DRAM lineup as we accelerate the move toward greater use of premium memory across the global landscape.”

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