Wednesday, September 25, 2019

Intel outlines “Barlow Pass” - 2nd gen Optane DC persistent memory

Intel outlined a series of milestones in advancing memory and storage for cloud, artificial intelligence and network edge applications.

Developments include:

  • Intel plans to operate a new Optane technology development line at its facilities in Rio Rancho, New Mexico; 
  • The second-generation of Intel Optane DC Persistent Memory, code-named “Barlow Pass,” scheduled for release in 2020 with Intel’s next-generation Intel Xeon® Scalable processor 
  • Intel’s industry-first demonstration of 144-layer QLC (Quad Level Cell) NAND for data center SSDs (solid-state drives), which are also expected in 2020.


Intel said the combination of its Optane technology with QLC 3D NAND technology on a single M.2 module enables Intel Optane memory expansion into thin and light notebooks and certain space-constrained desktop form factors – such as all-in-one PCs and mini PCs. The new product also offers a higher level of performance not met by traditional Triple Level Cell (TLC) 3D NAND SSDs today and eliminates the need for a secondary storage device.

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