Wednesday, April 13, 2016

Everspin Samples Highest Density MRAM Non-Volatile Memory

Everspin Technologies has begun sampling a 256Mb ST-MRAM Storage Class Memory (SCM) - the highest density commercial MRAM currently on the market. The expects to sample a 1Gb product based on its proprietary perpendicular magnetic tunnel junction (pMTJ) spin torque technology (ST-MRAM) later this year.

Everspin cited the following advantages for it ST-MRAM:

  • Supports 100,000 times faster write speeds than NAND flash
  • Operates on the DDR3/DDR4 DRAM memory interface
  • Requires no wear leveling
  • Provides the highest endurance of currently available non-volatile memories
  • Delivers low power operation
  • Enables instant on/off functionality

“We continue to bring the fastest non-volatile products to our customers, expanding our offering with a high density 1Gb DDR4 pMTJ ST-MRAM. This will provide new and innovative approaches to the way non-volatile memory solutions can be architected,” said Everspin CEO Phill LoPresti.


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