Sunday, April 24, 2011

Freescale Improves Base Station RF Power Transistors

Freescale Semiconductor introduced two LDMOS RF power transistors that allow wireless base station amplifiers to cover all channels in an entire allocated frequency band.

Freescale said the surge in mobile data traffic is driving a trend to extend amplifier systems to cover entire wireless frequency bands. Whereas most of today's amplifier systems operate with instantaneous (video) bandwidth limitations of 20 to 40 MHz and require a separate power amplifier for each channel, its new RF power LDMOS transistors deliver a combination of high linearity, high efficiency, wide instantaneous bandwidth and high power that extend the instantaneous signal bandwidth to an industry-leading 160 MHz.

"The need for RF power transistors to deliver exceptional linearity and efficiency over a full wireless band is no longer simply desirable; it is essential," said Ritu Favre, vice president and general manager of Freescale's RF Division. "The devices we are introducing today are the first in a family of broadband RF power transistors that includes all current and emerging wireless bands. Each device will be designed to combine all of the attributes – high efficiency and linearity and high output power – required to allow carriers to meet the challenges of the future."