Wednesday, May 12, 2010

NXP Semiconductor Pursues SiGe Chips for RF/Microwave

By the end of 2010, NXP Semiconductors will offer more than 50 products based on the latest SiGe (silicon-germanium) process technology.

The company said SiGe provides high power gain and excellent dynamic range, making it well suited for high-frequency applications in the wireless, broadband communications, networking, and multimedia markets. NXP currently has about a dozen silicon germanium based products in the market, and has developed and shipped more than 25 million RF products using its QUBiC4 technology.

NXP offers three variants of the QUBiC4 technology: QUBiC4+, a silicon-based process for applications up to 5GHz such as medium power amplifiers; QUBiC4X, a 0.25µm SiGe:C process introduced about 6 years ago, typically used for applications up to 30GHz and very low noise applications such as GPS; and the most recent 0.25µm QUBiC4Xi SiGe:C process, offering on Ft in excess of 200GHz, which is particularly suited for applications above 30GHz and those requiring minimum noise figure, such as VSAT and radar.

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