Monday, August 27, 2007

Infinera Selects Jazz's SiGe BiCMOS Process for 100 Gbps ICs

Infinera utilized Jazz Semiconductor's 0.18-micron Silicon Germanium (SiGe) BiCMOS process to enable the 100 Gbps IC used in its Digital Optical Networks architecture. The platform is built upon Jazz Semiconductor's 0.18-micron Analog/RF CMOS baseline process and includes four layers of metal. This process includes two bipolar (NPN) transistors, 3.3V CMOS, lateral and vertical PNP transistors, 2fF/µm² MIM capacitors, resistors (poly, Nwell and metal), and high-Q inductors. Options include deep trench isolation, Schottky diode, high-performance varactors, triple well, a stacked 4fF/µm² MIM capacitor, four layers of metal, and thick top metal.

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