Tuesday, August 28, 2007

Broadcom Introduces First 65 Nanometer Gigabit Ethernet Switches

Broadcom announced the availability of the industry's first Gigabit Ethernet (GbE) switches produced in 65 nanometer (65nm) CMOS process technology.

Broadcom said an unprecedented level of integration is achieved using 65nm process technology, which enables lower-power silicon. This, in turn, reduces overall costs in local area networks (LAN), service provider networks and data centers.

The new StrataXGS 200 series contains highly integrated multilayer Ethernet switches that can support up to 28 GbE ports and can operate at 10/100/1000 Mbps. The series provides wire speed Layer 2 (L2) switching and Layer 3 (L3) routing for highly manageable enterprise networks. It also performs IPv6 routing and transition services in hardware,. The series also integrates a 32-bit MIPS CPU processor optimized for supporting advanced QoS capabilities, including sophisticated metering, statistics and traffic management.

Broadcom estimates that it currently holds 70 percent market share in merchant silicon for GbE switch integrated circuits (ICs).