Showing posts with label Samsung. Show all posts
Showing posts with label Samsung. Show all posts

Tuesday, September 12, 2017

KDDI and Samsung prove 5G mmWave works at 190 kmh

KDDI and Samsung Electronics completed a series of 5G tests which demonstrate the viability and performance of 5G millimeter wave mobility solutions while traveling at speeds over 190km per hour.

The demonstration, which took place at 'Everland SPEEDWAY' in Korea, involved a battery of individual tests to examine the performance of Samsung's end-to-end 5G mmWave technology. Specifically, as a vehicle accelerated from 0 to 205km per hour on the race track between multiple 5G base stations, the test measured and evaluated a variety of metrics, including handover interruption time, uplink and downlink throughput stability, and latency stability (or "jitter").

In addition, KDDI and Samsung also demonstrated a successful handover scenario, with Samsung's 5G device attaching to the 5G base station as it approached the service area, and successfully being handed over to the target cell at a speed of 192km per hour (GPS speed).

Woojune Kim, Senior Vice President and Head of Next Generation Strategy in Network Business at Samsung Electronics, said, "It is becoming increasingly important that we accelerate our focus on 5G's ability to meet a growing number of performance metrics. Until now, peak bandwidth has been the common refrain, and certainly a big component of the future of 5G. However, the test we conducted with KDDI will help us build a more diverse portfolio of future 5G use cases."

"The trial successfully showcased stable performance under high-speed mobility conditions which will dramatically increase the service experience of users in vehicles," said Akira Matsunaga, Senior Director, Mobile Network Technical Development at KDDI. "We will continue our joint efforts with Samsung to test next generation technology to unprecedented levels and discover new service cases."

http://www.samsung.com/global/business/networks/insights/news/kddi-and-samsung-break-track-record-in-high-speed-5g-mobility-test

Charter tests 5G with Samsung

Charter Communications is conducting 5G and 4G LTE wireless networks lab and field trials at various locations in the U.S. in partnership with Samsung Electronics America. The trials, which began this summer, will run through the end of the year.

The 5G trial is evaluating fixed use cases using Samsung's pre-commercial 28 GHz (mmWave) system and devices. The 4G trials are performed at 3.5 GHz (CBRS), utilizing Samsung's combined 4G LTE small cell technology in an outdoor environment to evaluate mobile use cases.

"We are pleased to collaborate with Samsung on these trials, which provide Charter better insight into how our advanced, powered, high speed network-which currently passes 49 million homes and businesses-can be used to enable 5G services," said Craig Cowden, Senior VP, Wireless Technology at Charter Communications. "In addition, as we move closer to the launch of a Spectrum wireless service in 2018, our work with Samsung on trials of 4G small cell technology will support our overall wireless strategy."

"As a pioneer in small cell networks technologies, Samsung is excited to partner with Charter as they evaluate their next-generation 5G and 4G wireless network technologies," said Mark Louison, SVP and General Manager, Networks, Samsung Electronics America. "These projects, with communications leaders such as Charter, will continue to lay the foundation for future business models and customer applications that tap the full potential of both 4G LTE and 5G."

http://www.samsung.com/global/business/networks/insights/news/samsung-and-charter-to-collaborate-on-5g-trials-in-the-us

Thursday, August 17, 2017

Flash Memory Summit – big changes in non-volatile memory - part 1

Can you imagine a 128 TB SAS SSD? It is coming soon from Samsung in the familiar 2.5” disk drive package and destined for the next generation of cloud data centres. Leading companies and start-ups from across the storage industry met at this week's Flash Memory Summit in Santa Clara, California. A key takeaway from the event is that solid state storage continues to improve at a rate much faster than networking technologies. Solid state drives surpassed spinning disks in total capacity some time ago - Samsung announced a 16 TB SDD in August 2015 and currently offers a 32 TB SSD, but prices remain high.



The market is driven by unrelenting demand for flash drives in laptops, desktops and servers, especially in cloud data centres where there has been an uptick in spending over the last few quarters. NAND prices on a $/GB are significantly higher than they were 12 months. According to data from Objective Analysis, contract prices for NAND averaged $0.30 per gigabyte on July 2nd, compared to $0.20 per gigabyte a year ago. Looking at Amazon.com, the street price of a 500 GB SSD is about the same in mid-2017 as last summer. Meanwhile, with higher prices and relentless demand in the current market, the leading manufacturers of 3D NAND are doing quite well. For Samsung Electronics, this translated into very strong revenue and earnings for its June financial report, which predicted that a tight market for DRAM and 3D NAND will continue for the rest of the calendar year.

In a presentation at Flash Memory Summit, Jim Handy of Objective Analysis predicted that NAND prices will remain stable at these rates through mid-2018, but will then suddenly collapse due to a saturation of new supply entering the market. His argument goes that all vendors have begun to ship 3D NAND but only in limited volume due to the complexity of mastering 3D NAND manufacturing. Over time, these complexities are being ironed out, manufacturers will move to add additional layers of stacking and the cost per GB will become cheaper for 3D NAND than for 2D planar NAND. Objective Analysis expects a steep oversupply of 3D NAND by late 2018, even before significant new manufacturing facilities in China come online.

Disruption at Flash Memory Summit

This year’s Flash Memory Summit was disrupted on opening day by a fire in the exhibition area, apparently an electrical issue at one of the vendor stands. Thankfully no one was hurt, but the exhibits were cancelled for the remainder of the event. Conferences and keynotes were the forum for technological disruptions, of which there are plenty in this rapidly evolving segment.

Firstly, Samsung made several important announcements and previewed that massive 128 TB SSD. At a fundamental level, Samsung said its 3D NAND roadmap is progressing on schedule. Last year, Samsung introduced its 4th generation, 64-layer triple-level-cell V-NAND flash memory. This has now gone into production and is being used for products such as the 32TB SSD. Drive capacity and performance are expected to scale up with the upcoming v5 generation of 3D NAND. Samsung has already started work on v6 and v7, with an assumed 18-month interval between each generation. Samsung executives seemed confident they will be able to squeeze at least ten generations out of 3D NAND technology, which provide another decade of continuous improvement if Flash SSD. Beyond that, other non-volatile memory technologies will need to be developed.
Samsung's 1 TB V-NAND chip

Samsung also announced a 1 TB V-NAND chip, slated for commercial production next year, that will enable 2 TB of memory in a single V-NAND package. This is achieved by stacking 16 x 1 TB dies – an advancement the company considers 'one of the most important memory advances of the past decade'.

Samsung is introducing a 16 TB NGSFF (next generation small form factor) SSD that is designed for use in 1U rack servers. Measuring 30.5 x 110 x 4.38 mm, the Samsung NGSFF SSD aims for improved space utilisation and scaling. The company showcased a 1U sample design, codenamed Mission Peak, that pack 36 of the units for a total capacity of 576 TB in the 1 RU appliance. Samsung is looking for partners on this new drive form factor.

In addition, for extreme SSD read/write performance, Samsung introduced its first Z-SSD product, boasting 15 microseconds of read latency time, which is approximately a seventh of the read latency of an NVMe SSD. At the application level, the company estimates its Z-SSDs can reduce system response time by up to 12 fold compared to using NVMe SSDs.

Samsung is also introducing a technology it calls Key Value SSD. Whereas today's SSDs convert object data of widely ranging sizes into data fragments of a specific size called 'blocks', the new Key Value SSD technology allows SSDs to process data without converting it into blocks. Samsung said its Key Value instead assigns a ‘key’, or specific location, to each value, or piece of object data, regardless of its size. The key enables direct addressing of a data location, which in turn enables the storage to be scaled.

Thursday, June 22, 2017

Sprint and Samsung test massive MIMO on 2.5 GHz

U.S. operator Sprint, a Softbank company, and Samsung Electronics announced that on the streets of the city of Suwon in South Korea they recently tested massive MIMO on 2.5 GHz spectrum in a real-world environment to support Sprint's efforts to increase LTE Plus wireless capacity and coverage and offer gigabit service to its customers.

During the field testing in Suwon, massive MIMO Samsung radios, equipped with vertical and horizontal beamforming technology, achieved peak speeds of 330 Mbit/s per channel using a 20 MHz channel of 2.5 GHz spectrum. The companies stated that capacity per channel increased approximately four-fold, cell edge performance increased three times and the overall coverage area expanded compared with current radios.

Sprint has deployed 8T8R (8 transmit, 8 receive) radios across its U.S. network, and the test with Samsung was designed to compare the performance of massive MIMO radios with 8T8R radios. The test cases and requirements were jointly developed by Sprint and Samsung and included a variety of performance scenarios involving multi-user and non-stationary testing.

For the tests, Samsung provided the massive MIMO network infrastructure as well as test network design, operation, data collection and processing. Both companies plan to use the results of the testing to prepare for the commercial deployment of massive MIMO in the U.S. and in other markets globally.

Samsung noted that massive MIMO radios involve the use of more antenna elements, for example, 64T64R uses 128 antenna elements, whereas 2T2R/4T4R/8T8R configurations are used in a typical 4G LTE network. The massive MIMO antennas also use advanced horizontal and vertical beamforming technology to focus and transmit cellular signals into targeted locations. This enables more efficient use of spectrum to deliver faster speeds and higher data capacity in high-traffic locations.

Sprint plans to deploy massive MIMO radios with 128 antenna elements (64T64R) using its 2.5 GHz spectrum in cities across the U.S. to increase capacity by up to eight-fold. In March, Sprint became the first U.S. carrier to introduce gigabit-class LTE on a live commercial network with a launch in New Orleans.


In New Orleans, Sprint implemented three-channel carrier aggregation and 60 MHz of 2.5 GHz spectrum, combined with 4 x 4 MIMO and 256QAM higher order modulation to achieve Category 16 LTE download data speeds over a TDD network. With massive MIMO radios using 64T64R, Sprint expects to be able to deliver capacity beyond 1 Gbit/s and reach between 3 and 6 Gbit/s bandwidth per sector.


Saturday, May 13, 2017

Samsung and Cisco work with Verizon to implement 5G in Detroit

Samsung Electronics America, a subsidiary of Samsung Electronics, and Cisco, in partnership with Verizon, announced the successful deployment of what is believed to be the first multi-vendor end-to-end 5G trial network in the field, specifically in the Ann Arbor suburb of metropolitan Detroit in Michigan.

The companies noted that earlier in the year, Verizon announced that it planned to conduct customer trials of 5G technology for home broadband service via fixed wireless access. Under this program, Verizon is planning to launch trials in five U.S. cities in the second quarter of 2017 and expects to be conducting pilot trials in a total of 11 markets by the middle of the year.

The partners stated that each trial location presents a unique set of test parameters, including in terms of equipment vendors, geographies, population density and demographics. Ann Arbor is the first location to address a multi-vendor deployment of 5G, leveraging a solution that includes a 5G virtualised packet core based on the Cisco Ultra Services Platform with Advanced Services and Samsung's virtual RAN (vRAN), combined with its 5G Radio base stations and 5G home routers, to enable the delivery of broadband services to trial customers.

Based on Verizon's 5G Technical Forum specification, the three companies have completed a series of network vendor interoperability tests (NVIOT) that demonstrated seamless interworking between core network, radio edge and user devices. The tests also served to demonstrate a core principle of next-generation network virtualisation via multi-vendor support.

The Verizon multi-vendor trial is designed to showcase the readiness of key 5G technologies and prepare the way for the deployment of commercial 5G networks in the future. The trial also demonstrates that service providers can implement 5G networks to address specific market requirements by selecting network infrastructure components from a range of vendors.

Early ecosystem development has become a core focus for 5G, with IT and telecom pioneers alike working to build alignment and stability around next-generation R &D. Verizon’s 5G Technical Forum, to which Cisco and Samsung are strong contributors, has set out to establish early direction for commercial 5G technologies and services, with the goal of establishing a body of experience that is already being used to inform global 5G standards development efforts and ensure a smooth transition to commercialization.



  • Verizon announced in February plans to rollout 5G pre-commercial services to select customers in 11 U.S. markets by mid-2017. The company noted that the trials would encompass hundreds of cell sites and several thousand customer locations, with pilot markets to include Ann Arbor, Atlanta, Bernardsville (New Jersey), Brockton (Massachusetts), Dallas, Denver, Houston, Miami, Sacramento, Seattle and Washington DC.

Wednesday, March 29, 2017

Qualcomm Snapdragon 835 Powers Samsung Galaxy 8

Qualcomm confirmed that its Snapdragon 835 Mobile Platform will power the new Samsung Galaxy S8 in select regions.

The Qualcomm Snapdragon 835 Mobile Platform, will be the first commercial SoC manufactured using 10nm FinFET technology/

The chip integrates the Snapdragon X16 LTE modem, enabling the Galaxy S8 to support Gigabit LTE where available. The 835 is roughly 35 percent smaller in package size and consumes roughly 25 percent less power compared to the previous generation flagship processor.

The Galaxy S8 will also be the first smartphone to feature Qualcomm TruSignal adaptive antenna tuning technology for carrier aggregation.

The Qualcomm Snapdragon 835 offers improved processing power and performance with the new Qualcomm Kryo 280 CPU and Qualcomm Hexagon 682 DSP. Qualcomm said its Snapdragon 835 delivers up to a 25 percent increase in 3D graphics rendering performance with the Qualcomm Adreno 540 GPU compared to Adreno 530. Snapdragon 835 also supports object and scene-based 3D audio as well as visually immersive 4K Ultra HD premium (HDR10) video, that enables the Samsung Galaxy S8 to play HDR movies and other types of videos from major content publishers.

“We are proud to continue our long and productive collaboration with Samsung to help bring the most advanced mobile experiences, such as Gigabit LTE and mobile VR, to consumers with the new Samsung Galaxy S8,” said Alex Katouzian, senior vice president and general manager, mobile, Qualcomm Technologies, Inc. “Featuring a thin and light design with superior battery life, immersive multimedia, and exceptional photography with Gigabit LTE speeds, the Samsung Galaxy S8 powered by the Snapdragon 835 Mobile Platform delivers the experiences today’s mobile users demand.”



Wednesday, February 22, 2017

Samsung Launches Exynos 9 Processor Built on 10nm FinFET

Samsung Electronics announced mass production of its Exynos 9 Series 8895 premium application processor (AP) produced in 10-nanometer (nm) FinFET process technology with improved 3D transistor structure.  The 10-nm FinFET process allows up to 27% higher performance while consuming 40% less power when compared to 14nm technology.

Samsung's new Exynos 9 Series 8895 is the first processor of its kind to embed a gigabit LTE modem that supports five carrier aggregation, or 5CA. It delivers data throughput at max.1Gbps (Cat.16) downlink with 5CA and 150Mbps (Cat.13) uplink with 2CA.

The Exynos 8895 is an octa-core processor, comprising of four of Samsung’s 2nd generation custom designed CPU cores for improved performance and power efficiency in addition to four Cortex®-A53 cores. With Samsung Coherent Interconnect (SCI) technology, the latest processor integrates a heterogeneous system architecture that allows faster computing for a wide range of applications such as artificial intelligence, and deep learning.

The Exynos 8895 also delivers unsurpassed multimedia experience with its powerful GPU and multi-format codec (MFC) as well as next level 3D graphic performance that minimizes latency for 4K UHD VR and gaming experience with ARM®’s latest Mali™-G71 GPU.

“In addition to being built on the most advanced 10nm FinFET process technology, the new Exynos 9 Series 8895 incorporates Samsung’s cutting-edge technologies including a 2nd generation custom CPU, gigabit LTE modem, and more,” said Ben Hur, Vice President of System LSI marketing at Samsung Electronics. “With industry leading technologies like VPU, the Exynos 8895 will drive the innovation of next generation smartphones, VR headsets, and automotive infotainment system.”

http://www.samsung.com

Wednesday, October 5, 2016

Samsung to Acquire Viv for AI Platform

Samsung Electronics Co. agreed to acquire Viv Labs, a start-up developing an artificial intelligence platform designed to be "the intelligent interface to everything." Financial terms were not disclosed.

Viv's AI platform will give third-party developers the power to use and build conversational assistants and integrate a natural language-based interface into renowned applications and services. The company said its strengths include a sophisticated natural language understanding, machine learning capabilities and strategic partnerships.

Viv was founded by AI visionaries Dag Kittlaus, Adam Cheyer and Chris Brigham. As part of the acquisition, the founding team will work closely with Samsung’s Mobile Communications business, but continue to operate independently under its existing leadership.

“Unlike other existing AI-based services, Viv has a sophisticated natural language understanding, machine learning capabilities and strategic partnerships that will enrich a broader service ecosystem,” said Injong Rhee, CTO of the Mobile Communications business at Samsung Electronics. “Viv was built with both consumers and developers in mind. This dual focus is also what attracted us to Viv as an ideal candidate to integrate with Samsung home appliances, wearables and more, as the paradigm of how we interact with technology shifts to intelligent interfaces and voice control.”

http://www.samsunggic.com
http://www.viv.ai

Wednesday, September 7, 2016

T-Mobile US Tests 5G on 28 GHz Spectrum with Samsung

Samsung Electronics is collaborating with T-Mobile US on new 5G demonstrations and lab tests, including an outdoor environment using T-Mobile’s 28 GHz (mmWave) spectrum and Samsung’s 5G proof of concept system, which will be enabled by Samsung’s advanced beam forming technology.

In early 2017, additional in-depth trials will continue using a Samsung pre-commercial 28 GHz system.

“We are excited to work with Samsung to see how we can bring to life key attributes of emerging 5G technology, including extreme speed, low latency and massive connectivity,” said Neville Ray, Chief Technology Officer, T-Mobile. “Our collaboration with Samsung’s networks technology will enable us to enhance 5G development and availability.”

http://www.samsung.com

Monday, August 29, 2016

Samsung Commences Mass Production of 14-nm Mobile Processor

Samsung Electronics has begun mass production of Exynos 7 Quad 7570, the company’s newest mobile application processor (AP) built on 14-nanometer (nm) process technology for the budget smartphone market as well as other IoT devices.

The Exynos 7570 is also the first Exynos processor to fully integrate a Cat.4 LTE 2CA modem and connectivity solutions including WiFi, Bluetooth, frequency modulation (FM) and global navigation satellite system (GNSS) in one chip. Exynos 7570, with four Cortex-A53 cores in 14nm, delivers 70 percent improvements in CPU performance and 30 percent improvement in power efficiency when compared to its predecessor built on 28nm.

“With Exynos 7570, more consumers will be able to experience the performance benefits of the advanced 14nm FinFET process in affordable devices,” said Ben K. Hur, Vice President of System LSI Marketing at Samsung Electronics. “By successfully integrating various connectivity solutions, Samsung is strengthening its competitiveness in the single chip market”

Last year, Samsung was the first in the industry to adopt advanced 14nm FinFET technology for its premium processors and has since expanded the adoption to other segments, bringing premium features to more affordable smart devices. As part of such efforts, Exynos 7570 is the first in its class with 14nm FinFET, making it highly power-efficient while enabling outstanding performance.

http://www.samsung.com/exynos

Wednesday, August 10, 2016

Samsung Intros 4th Gen, 64-layer Triple-Level-Cell Flash Technology

Samsung introduced its 4th generation, 64-layer triple-level-cell V-NAND flash memory at this week's Flash Memory Summit in Santa Clara, California.

By stacking 64 layers of cell-arrays, Samsung said it is now able to increase its single-die density to 512Gb and its IO speed to 800Mbps.

This makes possible 1 TB Flash in a device weighing less than 1g, weighing less than half of a U.S. dime. The Samsung 1TB BGA SSD will use an extremely compact, ball grid array (BGA) package design that contains all essential SSD components including triple-level-cell V-NAND flash chips, LPDDR4 mobile DRAM and a state-of-the-art Samsung controller.  It will deliver unprecedented performance, reading sequentially at 1,500MB/s and writing sequentially at 900MB/s.

Samsung's 4th generation V-NAND debut continues its trend of yearly performance bumps. Starting in August 2013, Samsung has previously introduced three generations of “industry-first” V-NAND products with 24, 32 and 48-layer vertical cell-array stacking technologies. Commercial production is expected in Q4.

Samsung also announced its latest Serial Attached SCSI (SAS) SSD -- 32 TB -- the world largest single drive introduced to date.  This is also based on 512-gigabit (Gb) V-NAND chips. A total of 512 V-NAND chips are stacked in 16 layers to form a 1-terabyte (TB) package and the 32-terabyte (TB) SSD contains 32 of those packages.

https://news.samsung.com/global/samsung-showcases-industry-leading-flash-technologies-to-address-growing-requirements-of-storage-systems

Monday, August 8, 2016

Samsung Claims Top Spot in Enterprise SSDs - Key Role in Data Centers

Samsung Electronics is now the world’s number one supplier of enterprise solid state drives used in corporate data centers, according to a number of analyst firms cited by the company:

The IDC report, Worldwide Solid State Storage Quarterly Update CY 1Q16, shows that Samsung rose to the leader position in Enterprise SSD sales in Q1 of this year, with the IDC data showing Samsung at 32.4 percent compared to the second place finisher with 16.9 percent. This shows a sharp upswing in Enterprise SSD sales from Q4 of 2015 when Samsung was in a virtual dead heat with its closest competitor with about a 22 percent market share. For the year 2015, IDC showed Samsung with a 20.6 percent share.

Analyst firm Forward Insights showed a slightly larger market lead for Samsung, reporting that in the first quarter of 2016, Samsung easily led the enterprise SSD market with a 34 percent share, well above the 19 percent share of the nearest competitor. This compares with a second place Samsung finish with 25 percent of Enterprise SSD market share in Q4 of 2015, according to the analyst firm.

TrendFocus charted Samsung with a 45 percent leadership position in Enterprise SSD market share for the first quarter of this year, rising from a second place finish with 26 percent share in the fourth quarter of last year.

“The enterprise market is a top Samsung memory focus, so it should come as no surprise that we have now also taken the lead in supplying SSDs to the enterprise, after years of leadership in the client market,” said Jim Elliott, corporate vice president, Memory Marketing, Samsung Semiconductor, Inc. “Our securing the No. 1 position in enterprise SSDs has been supported by market leading advances in flash density and performance, and continued success with our 3D V-NAND manufacturing and state-of-the-art controllers,” he added.

http://www.samsung.com


Samsung Ships 512 GB NVMe SSD


Samsung Electronics has begun mass producing the industry’s first NVMe PCIe solid state drive (SSD) in a single ball grid array (BGA) package, for use in next-generation PCs and ultra-slim notebook PCs. The package that contains all essential SSD components including NAND flash memory, DRAM and controller.  The new SSD is 20mm x 16mm x 1.5mm and weighs only about one gram (an American dime by comparison weighs 2.3 grams). The single-package...

Samsung Ships its 15.36TB SSD


Samsung Electronics began shipping the industry’s largest solid state drive (SSD) – the “PM1633a,” a 15.36 terabyte (TB) drive. The new 15.36TB SSD is based on a 12Gb/s Serial Attached SCSI (SAS) interface, for use in enterprise storage systems. Samsung said the unprecedented 15.36TB of data storage on a single SSD is enabled by combining 512 of its 256Gb V-NAND memory chips. The 256Gb dies are stacked in 16 layers to form a single 512GB package,...

rage (UFS) 2.0 standa

Wednesday, July 13, 2016

Nokia and Samsung Expand Patent Cross License

Nokia and Samsung agreed to expand their patent cross license deal beyond the scope of the arbitration agreement between the two companies that was announced in February 2016.

The new agreement expands access for each company to patented technologies of the other and reinforces Nokia's leadership in technologies for the programmable world. With this expansion, Nokia expects a positive impact to the net sales of Nokia Technologies starting from the third quarter of 2016.

With this expanded agreement, Nokia Technologies' annualized net sales related to patent and brand licensing is expected to grow to a run rate of approximately EUR 950 million by the end of 2016.

"With intellectual property portfolios from Nokia Technologies, Nokia Networks and Alcatel-Lucent, Nokia has a wealth of technologies relevant to mobile devices and beyond," said Ramzi Haidamus, president of Nokia Technologies. "We welcome this expanded agreement with Samsung which recognizes the strength of our assets, and we continue to pursue new licensing opportunities across a number of diverse industries."

http://www.nokia.com

Wednesday, July 6, 2016

Samsung's Universal Flash Storage Cards Reach 256 GB

Samsung Electronics introduced a line of removable memory cards based on the JEDEC Universal Flash Storage (UFS) 1.0 Card Extension Standard.

The cards are designed for high-resolution mobile shooting devices such as DSLRs, 3D VR cameras, action cams and drones. Storage capacities include 256, 128, 64 and 32 gigabyte (GB).

Samsung’s new 256GB UFS removable memory card ─ simply referred to as the UFS card - provides more than five times faster sequential read performance compared to that of a typical microSD card, reading sequentially at 530 megabytes per second (MB/s) which is similar to the sequential read speed of the most widely used SATA SSDs. With this UFS card, consumers have the ability to read a 5GB, Full-HD movie in approximately 10 seconds, compared to a typical UHS-1 microSD card, which would take over 50 seconds with 95MB/s of sequential reading speed. Also, at a random read rate of 40,000 IOPS, the 256GB card delivers more than 20 times higher random read performance compared to a typical microSD, which offers approximately 1,800 IOPS.

When it comes to writing, the new 256GB UFS card processes 35,000 random IOPS, which is 350 times higher than the 100 IOPS of a typical microSD card, and attains a 170MB/s sequential write speed, almost doubling the top-end microSD card speed.

http://www.samsung.com

Thursday, June 23, 2016

Samsung and Red Hat Collaborate on NVMe + Ceph Storage

Samsung Electronics and Red Hat announced a high-performance, data center storage architecture that combines NVMe SSDs with Ceph.

Samsung said its NVMe Reference Design platform, together with Red Hat Ceph Storage, can deliver a highly scalable, more efficient TCO reference architecture that supports unified storage for enterprise IT or cloud environments in handling transactional databases, machine-generated data and unstructured data.

The combined storage solution – referred to as the Red Hat Ceph/Samsung Reference Architecture – can be deployed in an OpenStack environment to support the bandwidth, latency and IOPS requirements of high performance workloads and use cases, such as distributed MySQL databases, telco nDVR content retrieval and financial services. The Samsung NVMe Reference system is a dual-socket Xeon-based system with an EIA-compliant, 2RU chassis. It uses 4x 40Gb/s networking connectivity with remote direct memory access (RDMA).

“The data center community will appreciate the importance of the Red Hat Ceph/Samsung Storage Reference Architecture, as the harvesting of data analytics becomes a priority for businesses that want to better understand their customers and stay ahead of their competition,” said Jim Elliott, corporate vice president, memory marketing, Samsung Semiconductor, Inc. “Data-driven companies in search of performance optimization in an OpenStack environment can benefit from the high performance offered by Red Hat Ceph Storage software and our NVMe Reference Design as a compliment to existing capacity-optimized infrastructure,” he added.

http://www.samsung.com/semiconductor/support/tools-utilities/All-Flash-Array-Reference-Design/

Thursday, June 16, 2016

Samsung Acquires Joyent for Container-Native Platform

Samsung Electronics has acquired Joyent, a start-up based in San Francisco that delivers container-native infrastructure, offering public cloud and private cloud software solutions for real-time web and mobile applications. Financial terms were not disclosed.

Since its inception, just over ten years ago, Joyent has developed Node.js, a Javascript runtime, into a de facto standard for web, mobile and IoT architectures. Joyent now offers Triton, a containers as a service solution, and Manta, a scalable object storage solution.

As a result of this acquisition, Samsung will become an anchor tenant for Joyent’s Triton and Manta solutions. Joyent said Samsung will bring it scale, financial muscle, and a strong partner for innovation. Joyent will continue as an independent subsidiary of Samsung.

“Samsung evaluated a wide range of potential companies in the public and private cloud infrastructure space with a focus on leading-edge scalable technology and talent. In Joyent, we saw an experienced management team with deep domain expertise and a robust cloud technology validated by some of the largest Fortune 500 customers,” said Injong Rhee, CTO of the Mobile Communications business at Samsung Electronics
http://www.samsung.com
http://www.joyent.com

Tuesday, May 31, 2016

Samsung Ships 512 GB NVMe SSD

Samsung Electronics has begun mass producing the industry’s first NVMe PCIe solid state drive (SSD) in a single ball grid array (BGA) package, for use in next-generation PCs and ultra-slim notebook PCs.

The package that contains all essential SSD components including NAND flash memory, DRAM and controller.  The new SSD is 20mm x 16mm x 1.5mm and weighs only about one gram (an American dime by comparison weighs 2.3 grams). The single-package SSD’s volume is approximately a hundredth of a 2.5” SSD or HDD, and its surface area is about a fifth of an M.2 SSD.

http://www.samsung.com

Monday, April 4, 2016

Samsung: First 10-Nanometer Class DRAM Enters Production

Samsung Electronics announced the start of mass production of the industry’s first 10-nanometer (nm) class, 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips and the modules derived from them. The milestone is expected to accelerate the industry-wide shift to advanced DDR4 products.

The production of Samsung's 10nm-class DRAM uses ArF (argon fluoride) immersion lithography, free from the use of EUV (extreme ultra violet) equipment.

“Samsung’s 10nm-class DRAM will enable the highest level of investment efficiency in IT systems, thereby becoming a new growth engine for the global memory industry,” said Young-Hyun Jun, President of Memory Business, Samsung Electronics. “In the near future, we will also launch next-generation, 10nm-class mobile DRAM products with high densities to help mobile manufacturers develop even more innovative products that add to the convenience of mobile device users.”

The new DRAM supports a data transfer rate of 3,200 Mbps, which is more than 30 percent faster than the 2,400Mbps rate of 20nm DDR4 DRAM. Also, new modules produced from the 10nm-class DRAM chips consume 10 to 20 percent less power, compared to their 20nm-process-based equivalents, which will improve the design efficiency of next-generation, high-performance computing (HPC) systems and other large enterprise networks, as well as being used for the PC and mainstream server markets.

http://www.samsung.com

Wednesday, March 2, 2016

Samsung Ships its 15.36TB SSD

Samsung Electronics began shipping the industry’s largest solid state drive (SSD) – the “PM1633a,” a 15.36 terabyte (TB) drive.

The new 15.36TB SSD is based on a 12Gb/s Serial Attached SCSI (SAS) interface, for use in enterprise storage systems. Samsung said the unprecedented 15.36TB of data storage on a single SSD is enabled by combining 512 of its 256Gb V-NAND memory chips. The 256Gb dies are stacked in 16 layers to form a single 512GB package, with a total of 32 NAND flash packages in the 15.36TB drive. Samsung’s 3rd generation, 256-gigabit (Gb) V-NAND technology which stacks cell-arrays in 48 layers.

Because the PM1633a comes in a 2.5-inch form factor, enterprise storage managers can fit twice as many of the drives in a standard 19-inch, 2U rack, compared to an equivalent 3.5-inch storage drive.

http://www.samsung.com

Wednesday, February 24, 2016

#MWC16- Samsung Spins 256GB Flash for High-End Phones

Samsung Electronics has begun mass production of the first 256-gigabyte (GB) embedded memory based on the Universal Flash Storage (UFS) 2.0 standard.  The newly introduced embedded memory, which is targeted at high-end mobile devices, exceeds that of a typical SATA-based SSD for PCs.

The new Samsung UFS memory is based on the company’s most advanced V-NAND flash memory chips and a specially-designed high-performance controller. The UFS memory handles up to 45,000 and 40,000 input/output operations per second (IOPS) for random reading and writing respectively, over two times faster than the 19,000 and 14,000 IOPS of the previous generation of UFS memory.

For sequential reading, the 256GB UFS takes advantage of two lanes of data transfer to move data at up to 850MB/s, which is nearly twice as fast as a typical SATA-based SSD used in PCs. In terms of sequential writing, it supports up to 260MB/s, which is approximately three times faster than high-performance external micro SD cards.

“By providing high-density UFS memory that is nearly twice as fast as a SATA SSD for PCs, we will contribute to a paradigm shift within the mobile data storage market,” said Joo Sun Choi, Executive Vice President, Memory Sales and Marketing, Samsung Electronics. “We are determined to push the competitive edge in premium storage line-ups – OEM NVMe SSDs, external SSDs, and UFS – by moving aggressively to enhance performance and capacity in all three markets.”

http://www.samsung.com

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