Tuesday, October 4, 2011

IBM and Crocus Develop Next Generation Magnetic Memory Technology

IBM and Crocus Technology have entered into a cross licensing agreement to spur the development of magnetic memory technology.
The partnership brings together Crocus' thermally assisted next generation Magnetic-Logic-Unit (MLU) technology with IBM's magneto-resistive random access memory (MRAM) technology and processing capabilities.


Crocus' MLU, which was first announced by Crocus in June 2011, is based on a self-reference architecture and enables practical implementation of advanced magnetic logic and memory capabilities, a first for the industry.


IBM's MRAM technology promises significant advantages over competing memory technologies including low power usage, high speed, unlimited endurance (read and write cycles), and inherent non-volatility meaning data can be retained even if power is discontinued. MRAM has the potential to enable "instant-on" computers and longer battery life for mobile computing devices. http://www.ibm.com http://www.crocus-technology.com

  • In June 2009, Crocus Technology, a start-up with offices in Grenoble, France and Sunnyvale, California, announced a major milestone in its efforts to develop Magnetic Random Access Memory (MRAM). Tower Semiconductor will port Crocus' MRAM process technology into its CMOS manufacturing environment. As part of the exclusive agreement, Tower will perform all manufacturing steps required for Crocus' next-generation MRAM technology in its state-of-the-art 200mm Fab2 facility. Tower and Crocus will each dedicate specific equipment in Tower's factory to the manufacture of Crocus' MRAMs.


    Crocus' co-founder and CEO, Jean-Pierre Braun, said MRAM is particularly suitable for telecommunication, networking, computing and handheld applications that currently use SRAM and/or flash memory technology. MRAM provides non-volatile, unlimited-write-endurance, high-density, and symmetrical high-speed read & write.


    Crocus has developed a robust, reliable and scalable MRAM process based on its patented technology. It has seen improving yield and performance on its full-functionality 130nm MRAM test vehicle and is ready for the transition to commercial manufacturing. The integration into Tower's copper 130nm logic process sets the stage for bringing to market leading edge single chip memory products as well as for embedding MRAM into complex SOCs for market segments such as microcontrollers , automotive and communications.

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