Sunday, September 11, 2005

Samsung Electronics Develops First 16-Gigabit NAND

Samsung Electronics announced the world's highest density NAND flash -- a 16Gigabit (Gb) NAND memory device -- targeted at multi-feature mobile applications. The 16Gb NAND density was achieved with the industry's first use of 50-nanometer (nm) technology directly applicable to mass production processes and by using Samsung's proprietary 3D-transistor architecture.


Samsung said the new 16Gb memory device should accelerate further expansion of the NAND flash market across mobile and portable digital applications as an alternative to mini-HDDs (hard disk drives) and even HDDs for laptops.


Availability of Samsung's 16Gb NAND will allow mobile and portable application designers to use memory cards with densities up to 32-Gigabytes (GBs) by combining up to 16 such devices on a single card.


"The future of NAND is setting the stage for an irreversible shift in the design of digital end products as NAND becomes the key storage medium for data in virtually any portable form," said Dr. Chang-Gyu Hwang president and CEO of Samsung Electronics' Semiconductor Business.


He compared the growing embrace of NAND technology for data storage applications to that of the Gold Rush of 1849. "NAND flash will eventually replace other storage mediums, especially those used in mobile products, creating a "Flash Rush," as NAND continues to register an unprecedented surge in demand as the backbone of the mobile electronics era...With cards containing multiple 16Gb flash memory chips, you will be able to take your entire music and personal video libraries with you on one small portable device."


Samsung plans to begin mass producing its 16Gb NAND flash in the second half of 2006.
http://www.samsung.com

  • Samsung also unveiled the world's first 7.2 Megapixel CMOS image sensor (CIS) for compact cameras and camera phones. Supporting the low power requirement in mobile or portable applications, the new CIS chip performs at the same level and operates at a power level that is a mere 10 percent of its charge-coupled device (CCD) counterpart.

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